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BCM856DS
PNP/PNP matched double transistors
Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
1.2 Features Current gain matching Base-emitter voltage matching Drop-in replacement for standard double transistors AEC-Q101 qualified
1.3 Applications Current mirror Differential amplifier
1.4 Quick reference data
BCM856BS; BCM856BS/DG
BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 — 7 August 2008 Product data sheet
Table 1. Product overviewBCM856BS SOT363 SC-88 very small
BCM856BS/DG
BCM856DS SOT457 SC-74 small
BCM856DS/DG
Table 2. Quick reference data
Per transistorVCEO collector-emitter voltage open base - - −65 V collector current - - −100 mA
hFE DC current gain VCE= −5V;= −2mA
200 290 450
NXP Semiconductors BCM856BS; BCM856DS
PNP/PNP matched double transistors[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
Pinning information Ordering information
Per devicehFE1/hFE2 hFE matching VCE= −5V;= −2mA
[1] 0.9 1 -
VBE1−VBE2 VBE matching VCE= −5V;= −2mA
[2] --2 mV
Table 2. Quick reference data …continued
Table 3. Pinning emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 001aab555
sym0181 36
TR1
TR2
Table 4. Ordering informationBCM856BS SC-88 plastic surface-mounted package; 6 leads SOT363
BCM856BS/DG
BCM856DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
BCM856DS/DG
NXP Semiconductors BCM856BS; BCM856DS
PNP/PNP matched double transistors Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 5. Marking codesBCM856BS *BS
BCM856BS/DG PB*
BCM856DS DS
BCM856DS/DG R9
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - −80 V
VCEO collector-emitter voltage open base - −65 V
VEBO emitter-base voltage open collector - −5V collector current - −100 mA
ICM peak collector current single pulse;≤ 1ms −200 mA
Ptot total power dissipation Tamb≤25°C
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
[1]- 200 mW
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
[1]- 250 mW
Per devicePtot total power dissipation Tamb≤25°C
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
[1]- 300 mW
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
[1]- 380 mW junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors BCM856BS; BCM856DS
PNP/PNP matched double transistors Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Characteristics
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from junction to
ambient
in free air
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
[1]- - 625 K/W
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
[1]- - 500 K/W
Per deviceRth(j-a) thermal resistance from junction to
ambient
in free air
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
[1]- - 416 K/W
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
[1]- - 328 K/W
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per transistorICBO collector-base cut-off
current
VCB= −30V; =0A −15 nA
VCB= −30V; =0A;= 150°C −5 μA
IEBO emitter-base cut-off
current
VEB= −5V; =0A −100 nA
hFE DC current gain VCE= −5V;= −10μA 250 -
VCE= −5V;= −2mA
200 290 450
VCEsat collector-emitter
saturation voltage= −10 mA;= −0.5 mA −50 −200 mV= −100 mA;= −5mA −200 −400 mV
VBEsat base-emitter saturation
voltage= −10 mA;= −0.5 mA
[1]- −760 - mV= −100 mA;= −5mA
[1]- −920 - mV
NXP Semiconductors BCM856BS; BCM856DS
PNP/PNP matched double transistors[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
VBE base-emitter voltage VCE= −5V;= −2mA
[2] −600 −650 −700 mV
VCE= −5V;= −10 mA
[2] -- −760 mV collector capacitance VCB= −10V; =ie =0A;
f=1MHz - 2.2 pF emitter capacitance VEB= −0.5V; =ic =0A;
f=1MHz
-10 - pF transition frequency VCE= −5V;= −10 mA;= 100 MHz
100 175 - MHz noise figure VCE= −5V;= −0.2 mA; =2kΩ;=10 Hz to
15.7 kHz 1.6 - dB
VCE= −5V;= −0.2 mA; =2kΩ;=1 kHz;= 200Hz 3.1 - dB
Per devicehFE1/hFE2 hFE matching VCE= −5V;= −2mA
[3] 0.9 1 -
VBE1−VBE2 VBE matching VCE= −5V;= −2mA
[4] --2 mV
Table 8. Characteristics …continuedTamb =25 °C unless otherwise specified.
NXP Semiconductors BCM856BS; BCM856DS
PNP/PNP matched double transistors
NXP Semiconductors BCM856BS; BCM856DS
PNP/PNP matched double transistors
