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BCM847BVPHIN/a4000avaiNPN/NPN matched double transistors
BCM847BVNXPN/a20000avaiNPN/NPN matched double transistors
BCM847DSNXPN/a48000avaiNPN/NPN matched double transistors


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BL24C16 , The device is optimized for use in many industrial and commercial applications
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BL24C16 , The device is optimized for use in many industrial and commercial applications


BCM847BV-BCM847DS
NPN/NPN matched double transistors
Product profile1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
1.2 Features
Current gain matching Base-emitter voltage matching Drop-in replacement for standard double transistors
1.3 Applications
Current mirror Differential amplifier
1.4 Quick reference data
BCM847BV; BCM847BS;
BCM847DS
NPN/NPN matched double transistors
Rev. 06 — 28 August 2009 Product data sheet
Table 1. Product overview

BCM847BV SOT666 - BCM857BV BC847BV
BCM847BS SOT363 SC-88 BCM857BS BC847BS
BCM847DS SOT457 SC-74 BCM857DS -
Table 2. Quick reference data
Per transistor

VCEO collector-emitter voltage open base - - 45 V collector current - - 100 mA
hFE DC current gain VCE =5V; =2mA
200 290 450
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors

[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value. Pinning information Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Per device

hFE1/hFE2 hFE matching VCE =5V; =2mA
[1] 0.9 1 -
VBE1−VBE2 VBE matching VCE =5V; =2mA
[2] --2 mV
Table 2. Quick reference data …continued
Table 3. Pinning
emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 001aab555
sym0201 36
TR1
TR2
Table 4. Ordering information

BCM847BV - plastic surface-mounted package; 6 leads SOT666
BCM847BS SC-88 plastic surface-mounted package; 6 leads SOT363
BCM847DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 5. Marking codes

BCM847BV 3A
BCM847BS M1*
BCM847DS R6
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method. Thermal characteristics
Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor

VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6 V collector current - 100 mA
ICM peak collector current single pulse;≤ 1ms 200 mA
Ptot total power dissipation Tamb≤25°C
SOT666 [1][2]- 200 mW
SOT363 [1]- 200 mW
SOT457 [1]- 250 mW
Per device

Ptot total power dissipation Tamb≤25°C
SOT666 [1][2]- 300 mW
SOT363 [1]- 300 mW
SOT457 [1]- 380 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics
Per transistor

Rth(j-a) thermal resistance from
junction to ambient
in free air
SOT666 [1][2]- - 625 K/W
SOT363 [1]- - 625 K/W
SOT457 [1]- - 500 K/W
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method. Characteristics
Per device

Rth(j-a) thermal resistance from
junction to ambient
in free air
SOT666 [1][2]- - 416 K/W
SOT363 [1]- - 416 K/W
SOT457 [1]- - 328 K/W
Table 7. Thermal characteristics …continued
Table 8. Characteristics

Tamb =25 °C unless otherwise specified
Per transistor

ICBO collector-base cut-off
current
VCB =30V; =0A - 15 nA
VCB =30V; =0A;= 150°C 5 μA
IEBO emitter-base cut-off
current
VEB =5V; =0A - 100 nA
hFE DC current gain VCE =5V; =10μA 250 -
VCE =5V; =2mA
200 290 450
VCEsat collector-emitter
saturation voltage =10mA;= 0.5 mA 50 200 mV= 100 mA; =5mA 200 400 mV
VBEsat base-emitter
saturation voltage =10mA;= 0.5 mA
[1]- 760 - mV= 100 mA; =5mA
[1]- 910 - mV
VBE base-emitter voltage VCE =5V; =2mA
[2] 610 660 710 mV
VCE =5V; =10mA
[2]- - 770 mV collector capacitance VCB =10V; =ie =0A;=1 MHz - 1.5 pF emitter capacitance VEB= 0.5V; =ic =0A;=1 MHz
-11 - pF
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors

[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value. transition frequency VCE =5V; =10mA;= 100 MHz
100 250 - MHz noise figure VCE =5V;= 0.2 mA; =2kΩ;=10 Hz to
15.7 kHz 2.8 - dB
VCE =5V;= 0.2 mA; =2kΩ;=1 kHz;= 200Hz 3.3 - dB
Per device

hFE1/hFE2 hFE matching VCE =5V; =2mA
[3] 0.9 1 -
VBE1−VBE2 VBE matching VCE =5V; =2mA
[4] -- 2 mV
Table 8. Characteristics …continued

Tamb =25 °C unless otherwise specified
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors Application information Package outline
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