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Partno	Mfg	Dc	Qty	Available	Descript
BCM847BS	PHILIPS	N/a	15000	avai	NPN matched double transistor; delta hFE = 10 %

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BCM847BS
NPN matched double transistor; delta hFE = 10 %
Product proﬁle1.1 General description
NPN matched double transistor in a SOT363 (SC-88) SMD plastic package. Matched
version of BC847BS. The transistors are fully isolated internally.
PNP equivalent: BCM857BS.
1.2 Features Current gain matching Base-emitter voltage matching
1.3 Applications Current mirror Differential ampliﬁer
1.4 Quick reference data
BCM847BS
NPN matched double transistor; ΔhFE= 10 %
Table 1: Quick reference data
VCEO collector-emitter voltage open base - - 45 V collector current - - 100 mA
hFE DC current gain VCE = 5 V; =2mA
200 290 450
ΔhFE hFE matching VCE = 5 V; =2mA
--10 %
ΔVBE VBE matching VCE = 5 V; =2mA
--2 mV
Philips Semiconductors BCM847BS Pinning information Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2: Pinning emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1
sym0201 36
TR1
TR2
Table 3: Ordering information
BCM847BS SC-88 plastic surface mounted package; 6 leads SOT363
Table 4: Marking codes
BCM847BS M1*
Philips Semiconductors BCM847BS Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6 V collector current (DC) - 100 mA
ICM peak collector current single pulse;≤ 1ms 200 mA
Ptot total power dissipation Tamb ≤ 25°C - 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb ≤ 25°C [1]- 300 mW
Table 6: Thermal characteristics
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 416 K/W
Philips Semiconductors BCM847BS Characteristics
[1] Pulse test: tp ≤ 300μs; δ≤ 0.02.
Table 7: Characteristics
Tamb = 25 °C unless otherwise speciﬁed.
Per transistor
ICBO collector-base cut-off
current
VCB = 30 V; IE = 0 A - - 15 nA
VCB = 30 V; IE = 0 A;= 150°C 5 μA
IEBO emitter-base cut-off
current
VEB = 5 V; IC = 0 A - - 100 nA
hFE DC current gain VCE = 5 V; IC = 10μA - 250 -
VCE = 5 V; IC = 2 mA 200 290 450
VCEsat collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA - 50 200 mV
IC = 100 mA; IB = 5 mA [1]- 200 400 mV
VBEsat base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA - 760 - mV
IC = 100 mA; IB = 5 mA - 910 - mV
VBE base-emitter voltage VCE = 5 V; IC = 2 mA 610 660 710 mV
VCE = 5 V; IC = 10 mA - - 770 mV collector capacitance VCB = 10 V; IE = ie = 0 A;
f=1MHz - 1.5 pF emitter capacitance VEB= 0.5V;IC =ic =0A;
f=1MHz
-11 - pF transition frequency VCE = 5 V; IC = 10 mA;= 100 MHz
100 250 - MHz
Per device
ΔhFE DC current gain
matching
VCE = 5 V; IC = 2 mA - - 10 %
ΔVBE base-emitter voltage
matching
VCE = 5 V; IC = 2 mA - - 2 mV
Philips Semiconductors BCM847BS Package outline Packing information
[1] For further information and the availability of packing methods, see Section14.
[2] T1: normal taping
[3] T2: reverse taping
Table 8: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
BCM847BS SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165
Philips Semiconductors BCM847BS
10. Revision history
Table 9: Revision history
BCM847BS_2 20050406 Product data sheet - 9397 750 14722 BCM847BS_1
Modiﬁcations: • Table 7 Revaluation of data according to the latest control samples Table 7 ICBO unit for conditions VCB = 30 V; IE = 0 A; Tj = 150 °C amended toμA
BCM847BS_1 20040914 Product data sheet - 9397 750 13711-

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