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BC857BL3INFINEONN/a50159avaiPNP Silicon AF Transistors


BC857BL3 ,PNP Silicon AF TransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 , BC857BL3 45 - -C ..
BC857BLT1 ,General Purpose Transistors(PNP Silicon)MAXIMUM RATINGSRating Symbol BC856 BC857 BC858 Unit3Collector–Emitter Voltage V –65 –45 –30 VCEO1Co ..
BC857B-M ,PNP general purpose transistorsLIMITING VALUESIn accordance with the Absolute Maximum System (IEC 60134).SYMBOL PARAMETER CONDITIO ..
BC857BMTF ,PNP Epitaxial Silicon TransistorApplications• Suitable for automatic insertion in thick and thin-film circuits3• Low Noise: BC859, ..
BC857BS ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BC857BS-7-F , DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BFR90 ,RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Document Number 850284 (9) Rev. 3, 20-Jan-99BFR90Vishay SemiconductorsS11 S21 S12 S22LIN LIN LIN L ..
BFR90A ,Silicon NPN Planar RF TransistorRev. 3, 20-Jan-99 3 (9)BFR90AVishay SemiconductorsS11 S21 S12 S22LIN LIN LIN LINV /V I /mA f/MHz AN ..
BFR91 ,RF & MICROWAVE DISCRETE LOW POWER TRANSISTORSRev. 3, 20-Jan-99 1 (8)BFR91Vishay SemiconductorsElectrical DC CharacteristicsT = 25

BC857BL3
PNP Silicon AF Transistors
BC857BL3, BC858BL3
PNP Silicon AF Transistors

Preliminary data
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC847BL3,
BC848BL3 (NPN)
Maximum Ratings
Thermal Resistance
BC857BL3, BC858BL3
DC Characteristics
BC857BL3, BC858BL3
AC Characteristics
BC857BL3, BC858BL3
DC current gain h
CE = 5 V101010-2-112101010
555Ι0
EHP00380CEsat0.30.5
0.10.20.4Ι
Base-emitter saturation voltage
C = ƒ(V), h = 2010
0.6V1.210C
Collector cutoff current ICBO = ƒ(TA) = 30 V050100150
EHP00381
ΙCB0
typ
BC857BL3, BC858BL3
Transition frequency f
CE = 5 V101010
MHz01251010Ι
Collector-base capacitance C
CB= ƒ (VCB0
Emitter-base capacitance C
EB0)51010
EHP00376CB0EB0
EB0V
CB0C01
h parameter h
e = ƒ(IC) normalizedCE = 5V1010-101h10101022e
h parameter h
e = ƒ(VCE) normalizedC = 2mA0102030EHP00384
h11h22
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