BC856T ,NPN Silicon AF TransistorsCharacteristics per TransistorV 65 - - VCollector-emitter breakdown voltage (BR)CEOI = 10 mA, I = 0 ..
BC857 ,PNP Silicon Transistor (General purpose application Switching application)Electrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
BC857A ,SMD Small Signal Transistor PNP Low Noise
BC857A ,SMD Small Signal Transistor PNP Low Noise
BC857A ,SMD Small Signal Transistor PNP Low NoiseFeaturesC 3 • PNP Silicon Epitaxial Planar Transistors for 2switching and AF amplifier
BC857A ,SMD Small Signal Transistor PNP Low Noise
BFR182W ,NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
BFR182W ,NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
BFR182W ,NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
BFR183 ,RF-BipolarcharacteristicsCollector-emitter breakdown voltage 12 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-emi ..
BFR183 ,RF-BipolarBFR183NPN Silicon RF Transistor3
BC856T
NPN Silicon AF Transistors
PNP Silicon AF Transistor
Preliminary data For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 846T
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
Electrical Characteristics at TA=25°C, unless otherwise specified
DC Characteristics per Transistor
Electrical Characteristics at TA=25°C, unless otherwise specified
AC Characteristics per Transistor
Total power dissipation Ptot = f (TS)
50
100
150
200
300
tot
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10 10
totmax
totDC
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Transition frequency fCE = 5V101010
MHz01251010Ι
Collector-base capacitance CCB = f (V
Emitter-base capacitance CEBO)51010
EHP00376CB0EB0
EB0V
CB0C01
Collector-emitter saturation voltage = f (V), h = 20
EHP00380Ι
Collector cutoff current ICBO = f (TA)CB = 30V
ΙCB0
Base-emitter saturation voltage10
EHP00379
BEsatV
0.6V1.2
DC current gain hCE = 5V101010-2-112101010
555Ι
