BC849 , 0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 200
BC849 , 0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 200
BC849BLT1 ,General Purpose TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC849BLT1 ,General Purpose TransistorMaximum ratings are those values beyond which device damage can occur.MARKING DIAGRAM
BC849BLT1G , General Purpose Transistors
BC849BMTF ,NPN Epitaxial Silicon TransistorApplications• Suitable for automatic insertion in thick and thin-film circuits• Low Noise: BC849, B ..
BFP67R ,Silicon NPN Planar RF Transistor Document Number 850172 (12) Rev. 3, 20-Jan-99BFP67/BFP67R/BFP67WVishay SemiconductorsCommon Emitte ..
BFP67R ,Silicon NPN Planar RF Transistor Document Number 850174 (12) Rev. 3, 20-Jan-99BFP67/BFP67R/BFP67WVishay SemiconductorsS11 S21 S12 S ..
BFP67W ,Silicon NPN Planar RF TransistorRev. 3, 20-Jan-99 3 (12)BFP67/BFP67R/BFP67WVishay SemiconductorsS11 S21 S12 S22LIN LIN LIN LINV /V ..
BFP740 ,Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Packageapplications• Outstanding noise figure F = 0.5 dB at 1.8 GHz VPS056051 Outstanding noise figure F ..
BFP740F ,Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 PackageapplicationsTSFP-4• Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0 ..
BFP740F ,Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 PackageCharacteristics4 4.7 - VCollector-emitter breakdown voltage V(BR)CEOI = 1 mA, I = 0 C B- - 30 µACol ..
BC849
