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BC846UINFINEONN/a3000avaiGeneral Purpose Transistors


BC846U ,General Purpose TransistorsCharacteristics per TransistorCollector-emitter breakdown voltage V 65 - - V(BR)CEOI = 10 mA, I = 0 ..
BC846UPN ,General Purpose Transistorsapplications56

BC846U
General Purpose Transistors
BC846U
NPN Silicon AF Transistor Array
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors
with good matching in one package
EHA0717821E2B1E1
TR1
TR2
Maximum Ratings
Thermal Resistance

1For calculation of RthJA please refer to Application Note Thermal Resistance
BC846U
DC Characteristics per Transistor
BC846U
Electrical Characteristics at T
A = 25 °C, unless otherwise specified.
AC characteristics
BC846U
Total power dissipation Ptot = f (TS)

50
100
150
200
300
tot
Permissible Pulse Load
totmax / PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
Permissible Pulse Load R
thJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
BC846U
Transition frequency f
CE = 5V101010
MHz01251010C
Collector-base capacitance C
CB = f (VCBO
Emitter-base capacitance C
EBO)51010
EHP00361CB0EB0
EB0V
CB0C01
Collector cutoff current I
CBO = f (TA)CB = 30V
ΙCB0
Collector-emitter saturation voltage
C = f (VCEsat), hFE = 20
EHP00367
BC846U
DC current gain h
CE = 5V101010-2-112101010
555C
Base-emitter saturation voltage
10
EHP00364
BEsatV
0.6V1.2
0.20.40.8
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