BC81725MTF ,NPN Epitaxial Silicon TransistorApplications• Suitable for AF-Driver stages and low power output stages3• Complement to BC807/BC808 ..
BC81725MTF ,NPN Epitaxial Silicon TransistorBC817/BC818BC817/BC818Switching and Amplifier
BC817-25-MTF ,NPN Epitaxial Silicon TransistorBC817/BC818BC817/BC818Switching and Amplifier
BC817-25-MTF ,NPN Epitaxial Silicon TransistorApplications• Suitable for AF-Driver stages and low power output stages3• Complement to BC807/BC808 ..
BC817-25W ,DiscreteCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 45 - -BC817WC B25 - ..
BC817-40 , 0.250W General Purpose NPN SMD Transistor. 45V Vceo, 0.500A Ic, 250BC817-25BC817-40®SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC817-25 6BBC817-40 6C■ SI ..
BF775 ,RF-BipolarBF 775NPN Silicon RF Transistor3
BC81716MTF-BC81725MTF-BC817-25-MTF
NPN Epitaxial Silicon Transistor
BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/BC808 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector Emitter Voltage CES : BC817 50 V : BC818 30 V V Collector Emitter Voltage CEO : BC817 45 V : BC818 25 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 800 mA C P Collector Power Dissipation 310 mW C T Junction Temperature 150 °C J T Storage Temperature -65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I =10mA, I =0 CEO C B : BC817 45 V : BC818 25 V BV Collector-Emitter Breakdown Voltage I =0.1mA, V =0 CES C BE : BC817 50 V : BC818 30 V BV Emitter-Base Breakdown Voltage I =0.1mA, I =0 5 V EBO E C I Collector Cut-off Current V =25V, V =0 100 nA CES CE BE I Emitter Cut-off Current V =4V, I =0 100 nA EBO EB C 100 630 h DC Current Gain V =1V, I =100mA FE1 CE C h V =1V, I =300mA 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =500mA, I =50mA 0.7 V CE C B V (on) Base-Emitter On Voltage V =1V, I =300mA 1.2 V BE CE C f Current Gain Bandwidth Product V =5V, I =10mA 100 MHz T CE C f=50MHz C Output Capacitance V =10V, f=1MHz 12 pF ob CB ©2002 Rev. A2, August 2002
