BC808-25LT1 ,General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)ACharacteristic Symbol Min Typ Max Uni ..
BC808-40 , 0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.500A Ic, 250Absolute Maximum RatingsT = 25 °C, unless otherwise specifiedambParameter Test condition Part Symbo ..
BC808-40 , 0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.500A Ic, 250
BC808-40 , 0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.500A Ic, 250
BC808W ,PNP Silicon AF Transistor for general...
BC808W ,PNP Silicon AF Transistor for general...
BF579 ,Silicon PNP Planar RF TransistorRev. 3, 20-Jan-99 1 (5)BF579/BF579RVishay SemiconductorsElectrical DC CharacteristicsT = 25
BC808-25LT1
General Purpose Transistors
BC808-25LT1G,
SBC808-25LT1G,
BC808-40LT1G
General Purpose
Transistors
PNP Silicon
Features AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
THERMAL CHARACTERISTICSStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1. FR−5 = 1.0 x 0.75 x 0.062 in.2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
