| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BC546C |
FSC|Fairchild Semiconductor |
N/a |
2000 |
 |
NPN Silicon Amplifier Transistor 625mW |
| BC546C |
PH |
N/a |
1000 |
|
NPN Silicon Amplifier Transistor 625mW |
BC547 PH,Features• NPN Silicon Epitaxial Planar Transistors 0.142 (3.6)0.181 (4.6)• These transistors are subdivided into three groupsA, B, and C according to ..
BC547 ,08-May-02 3BC546 thru BC548Vishay Semiconductorsformerly General SemiconductorRatings and Characteristic Curves (T = 25°C unless otherwise noted)A
BC546C , NPN Silicon Amplifier Transistor 625mW
BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110pin configuration TO-18.Mechanical Datamax. ∅ Case: TO-92 Plastic Package0.022 (0.55)Weight: approx ..
BF1005SR ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005SR ,RF-MOSFETCharacteristics12 - - VDrain-source breakdown voltage V(BR)DSI = 650 µA, V = 0 , V = 0 D G1S G2S8 - ..
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
