BC490A ,High Current TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC516 ,PNP Darlington transistor
BC516 ,PNP Darlington transistor
BC516 ,PNP Darlington transistor
BC516 ,PNP Darlington transistor
BC517 ,NPN Darlington TransistorBC517 NPN Darlington TransistorJanuary 2005BC517NPN Darlington Transistor• This device is designed ..
BF1005 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005R ,RF-MOSFETBF1005...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up to ..
BF1005S ,RF-MOSFETBF1005S...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up t ..
BF1005SR ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005SR ,RF-MOSFETCharacteristics12 - - VDrain-source breakdown voltage V(BR)DSI = 650 µA, V = 0 , V = 0 D G1S G2S8 - ..
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BC490A
High Current Transistors
--
PNP Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS*1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
COLLECTOR
BASE
EMITTER
