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BC487ONN/a5000avaiNPN SILICON PLANAR EPITAXIAL TRANSISTORS


BC487 ,NPN SILICON PLANAR EPITAXIAL TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC488BRL1 , High Current Transistors PNP Silicon
BC489BZL1 ,Transistor Silicon Plastic NPNELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
BC490A ,High Current TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC516 ,PNP Darlington transistor
BC516 ,PNP Darlington transistor
BF1005 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005R ,RF-MOSFETBF1005...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up to ..
BF1005S ,RF-MOSFETBF1005S...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up t ..
BF1005SR ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005SR ,RF-MOSFETCharacteristics12 - - VDrain-source breakdown voltage V(BR)DSI = 650 µA, V = 0 , V = 0 D G1S G2S8 - ..
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network


BC487
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC487, BC487B
High Current T ransistors
NPN Silicon
Features PbïFree Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector ï Emitter Voltage VCEO 60 Vdc
Collector ï Base Voltage VCBO 60 Vdc
Emitter ï Base Voltage VEBO 5.0 Vdc
Collector Current ï Continuous IC 0.5 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C 625
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C 1.5
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg ï55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
JunctionïtoïAmbient
RJA 200 °C/W
Thermal Resistance,
JunctionïtoïCase
RJC 83.3 °C/W
*For additional information on our PbïFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Device Package Shipping†
ORDERING INFORMATION
BC487 TOï92 5000 Units / Box
BC487B TOï92 5000 Units / Box
BC487BRL1 TOï92 2000/Tape & Reel
MARKING
DIAGRAM
COLLECTOR
BASE
EMITTER
http://
BC48
AYWW
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
BC487G TOï92
(PbïFree)
5000 Units / Box
BC487 = Device Code
x = nothing or B = Assembly Location = Year = Work Week = PbïFree Package
(Note: Microdot may be in either location)
BC487BG TOï92
(PbïFree)
5000 Units / Box
TOï92
CASE 29
STYLE 17232
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
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