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BC33716BUFSCN/a316avaiNPN Epitaxial Silicon Transistor
BC337-2.5 |BC33725N/a200avaiNPN Epitaxial Silicon Transistor
BC33725N/a114avaiNPN Epitaxial Silicon Transistor


BC33716BU ,NPN Epitaxial Silicon TransistorApplications• Suitable for AF-Driver stages and low power output stages• Complement to BC327/BC328T ..
BC337-2.5 ,NPN Epitaxial Silicon TransistorBC337/338BC337/338Switching and Amplifier
BC33725 ,NPN Epitaxial Silicon TransistorApplications• Suitable for AF-Driver stages and low power output stages• Complement to BC327/BC328T ..
BC337-25 , 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 160Absolute Maximum RatingsT = 25 °C, unless otherwise specifiedambParameter Test condition Part Symbo ..
BC337-25 , 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 160
BC337-25 , 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 160
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BDT64C , isc Silicon PNP Darlington Power Transistor
BDT65C , isc Silicon NPN Darlington Power Transistor


BC33716BU-BC337-2.5-BC33725
NPN Epitaxial Silicon Transistor
BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC337 50 V : BC338 30 V V Collector-Emitter Voltage CEO : BC337 45 V : BC338 25 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 800 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I =10mA, I =0 CEO C B : BC337 45 V : BC338 25 V BV Collector-Emitter Breakdown Voltage I =0.1mA, V =0 CES C BE : BC337 50 V : BC338 30 V BV Emitter-Base Breakdown Voltage I =0.1mA, I =0 5 V EBO E C I Collector Cut-off Current CES : BC337 V =45V, I =0 2 100 nA CE B : BC338 V =25V, I =0 2 100 nA CE B h DC Current Gain V =1V, I =100mA 100 630 FE1 CE C h V =1V, I =300mA 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =500mA, I =50mA 0.7 V CE C B V (on) Base Emitter On Voltage V =1V, I =300mA 1.2 V BE CE C f Current Gain Bandwidth Product V =5V, I =10mA, f=50MHz 100 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 12 pF ob CB E h Classification FE Classification 16 25 40 h 100 ~ 250 160 ~ 400 250 ~ 630 FE1 h 60- 100- 170- FE2 ©2002 Rev. A2, August 2002
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