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BC309N/a1700avaiSwitching and Amplifier Applications


BC309 ,Switching and Amplifier ApplicationsBC307/308/309BC307/308/309Switching and Amplifier
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BC309
Switching and Amplifier Applications
BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC307 -50 V : BC308/309 -30 V V Collector-Emitter Voltage CEO : BC307 -45 V : BC308/309 -25 V V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -100 mA C P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG ©2002 Rev. A2, August 2002
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