BC308B ,PNP EPITAXIAL SILICON TRANSISTORBC307/308/309BC307/308/309Switching and Amplifier
BC309 ,Switching and Amplifier ApplicationsBC307/308/309BC307/308/309Switching and Amplifier
BC318 , NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC327 , 0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100ON SemiconductorBC327,Amplifier TransistorsBC327-16,PNP SiliconBC327-25,
BC327-16 , 0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100Rev. 1.3, 07-Apr-04 3P -AdmissiblePowerDissipation(W)r -PulseThermalResistance( C/W)° tot-I -Collec ..
BC327-25 , 0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 160THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitCOLLECTORThermal Resistance, Junction to Ambie ..
BDP1A16G , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDP1A16G , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDP32 ,PNP medium power transistor
BDP32 ,PNP medium power transistor
BDP32 ,PNP medium power transistor
BDP948 ,PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)CharacteristicsCollector-emitter breakdown voltage V V (BR)CEOI = 10 mA, I = 0 45 - -BDP948C B60 ..
BC307A-BC308B
1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120
BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC307 -50 V : BC308/309 -30 V V Collector-Emitter Voltage CEO : BC307 -45 V : BC308/309 -25 V V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -100 mA C P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG ©2002 Rev. A2, August 2002
