IC Phoenix
 
Home ›  B › B9 > BC108, 0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 110
BC108 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BC108STN/a100000avai 0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 110
BC108N/a3avai 0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 110


BC108 , 0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 110ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitBC107 BC108V Collector-Base Voltage (I =0) 50 30 ..
BC108 , 0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 110ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise specified)caseSymbol Parameter Test Conditions ..
BC108B , LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
BC109 , 0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 200
BC109 , 0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 200
BC109B , LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
BD9775FV , Step-down, High-efficiency Switching Regulators (Controller type)
BD9775FV , Step-down, High-efficiency Switching Regulators (Controller type)
BD9778F , Flexible Step-down Switching Regulators with Built-in Power MOSFET
BD9833KV , 8 Channel Switching Regulator Controller and 1 Series Regulator for DVC
BD9870FPS-E2 , Simple Step-down Switching Regulator with Built-in Power MOSFET
BD9883AF , Silicon Monolithic Integrated Circuit

BC108
0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 110
BC107
BC108
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTION
The BC107 and BC108 are silicon planar
epitaxial NPN transistorsin TO-18 metal case.
They are suitable for usein driver stages, low
noise input stages and signal processing circuits television reveivers. The PNP complemet for
BC107is BC177.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BC107 BC108
VCBO Collector-Base Voltage(IE =0) 50 30 V
VCEO Collector-Emitter Voltage(IB =0) 45 20 V
VEBO Emitter-Base Voltage(IC =0) 6 5 V Collector Current 100 mA
Ptot Total Dissipationat Tamb≤25oC Tcase≤25oC
Tstg Storage Temperature -55to 175 oC Max. Operating Junction Temperature 175 oC
TO-18
1/6
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
500 C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current(IE =0)
for BC107
VCB =40V
VCB =40V Tcase =150oC
for BC108
VCB =20V
VCB =20V Tcase =150oC
V(BR)CBO Collector-Base
Breakdown Voltage
(IE=0) =10μA
for BC107
for BC108
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB =0) =10 mA
for BC107
for BC108
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC =0) =10μA
for BC107
for BC108
VCE(sat)∗ Collector-Emitter
Saturation Voltage =10 mA IB =0.5 mA =100 mA IB =5 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage =10 mA IB =0.5 mA =100 mA IB =5 mA
VBE(on)∗ Base-Emitter On
Voltage =2 mA VCE =5V =10 mA VCE =5V
550 650
hFE∗ DC Current Gain IC =2 mA VCE =5V
for BC107
for BC107 Gr.A
for BC107 Gr.B
for BC108
for BC108 Gr.A
for BC108 Gr.B
for BC108 Gr.C =10 μAVCE =5V
for BC107
for BC107 Gr.A
for BC107 Gr.B
for BC108
for BC108 Gr.A
for BC108 Gr.B
for BC108 Gr.C
hfe∗ Small Signal Current
Gain =2 mA VCE =5V f =1KHz
for BC107
for BC107 Gr.A
for BC107 Gr.B
for BC108
for BC108 Gr.A
for BC108 Gr.B
for BC108 Gr.C =10 mA VCE=10Vf= 100 MHz
∗ Pulsed: Pulse duration=300μs, duty cycle≤ 1%
BC107/BC108
2/6
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
CCBO Collector Base
Capacitance =0 VCB =10V f= 1MHz 4 6 pF
CEBO Emitter Base
Capacitance =0 VEB =0.5V f= 1MHz 12 pF Noise Figure IC =0.2 mA VCE =5V 1KHz Rg =2KΩ B= 200Hz
210 dB
hie Input Impedance IC =2 mA VCE =5Vf =1KHz
for BC107
for BC107 Gr.A
for BC107 Gr.B
for BC108
for BC108 Gr.A
for BC108 Gr.B
for BC108 Gr.C
hre Reverse Voltage Ratio IC =2 mA VCE =5Vf =1KHz
for BC107
for BC107 Gr.A
for BC107 Gr.B
for BC108
for BC108 Gr.A
for BC108 Gr.B
for BC108 Gr.C
hoe Output Admittance IC =2 mA VCE =5Vf =1KHz
for BC107
for BC107 Gr.A
for BC107 Gr.B
for BC108
for BC108 Gr.A
for BC108 Gr.B
for BC108 Gr.C
∗ Pulsed: Pulse duration=300μs, duty cycle≤ 1% Normalized Current Gain. Collector--emitterSaturation Voltage.
BC107/BC108
3/6
Power Rating Chart.
Collector-baseCapacitance. Transition Frequency.
BC107/BC108
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 12.7 0.500 0.49 0.019 5.3 0.208 4.9 0.193 5.8 0.228 2.54 0.100 1.2 0.047 1.16 0.045
L45o 45o E
TO-18 MECHANICAL DATA
BC107/BC108
5/6
Information furnishedis believedtobe accurateand reliable. However, SGS-THOMSON Microelectronics assumesno responsabilityforthe
consequencesofuse ofsuch informationnorfor anyinfringementof patentsor otherrightsof third parties which may resultsfromits use.No
licenseis grantedby implicationor otherwise underany patentor patentrightsof SGS-THOMSON Microelectronics. Specifications mentionedthis publicationare subjectto change without notice.This publication supersedes andreplacesall information previouslysupplied.
SGS-THOMSONMicroelectronics productsarenot authorizedfor useascriticalcomponentsin lifesupportdevicesor systems withoutexpress
writtenapprovalof SGS-THOMSONMicroelectonics. 1997 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved
SGS-THOMSON Microelectronics GROUPOF COMPANIES
Australia- Brazil- Canada- China- France- Germany- Italy- Japan- Korea- Malaysia- Malta- Morocco- The Netherlands-
Singapore- Spain- Sweden- Switzerland- Taiwan -Thailand- United Kingdom- U.S.A
BC107/BC108
6/6
ic,good price

TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED