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BBY59-02V |BBY5902VINFINEONN/a40avaiLatest Silicon Discretes
BBY59-02V |BBY5902VLNFINEONN/a216660avaiLatest Silicon Discretes


BBY59-02V ,Latest Silicon DiscretesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BBY59-02V ,Latest Silicon DiscretesBBY59...Silicon Tuning Diode

BBY59-02V
Latest Silicon Discretes
BBY59...
Silicon Tuning Diode
High Q hyperabrupt tuning diode Designed for low tuning voltage operation
for VCO's in moblie communications equipment For control elements as TCXOS and VCXOS High capacitance ratio and good C-V linearity
BBY59-02V
Maximum Ratings
BBY59...
Electrical Characteristics at T
A = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BBY59...
Diode capacitance C
T = (VR)
f = 1MHz
10
15
20
25
30
35
40
45
50
60
Temperature coefficient of the diode
capacitance TC
C = (VR)
0.00025
0.0003
0.00035
0.0004
0.00045
0.0006
0.00065
0.0007
0.00075
0.0008
0.00085
0.00095
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