| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BB304MDW-TL-E |
RENESAS |
N/a |
1200 |
 |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier |
BB304MDW-TR HITACHI
BB304MDW-TR
BB304MDW-TR-E RENESAS
BB304MDW-TR-EQ RENESAS
BB304MDW-TL-E , Built in Biasing Circuit MOS FET IC VHF RF Amplifier
BB305C , Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB305MEW-TL-E , Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB404 , Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB405 ,UHF variable capacitance diode
BD679AS ,NPN Epitaxial Silicon TransistorApplications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respective ..
BD680 ,Leaded Power Transistor DarlingtonTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, R 3.13 °C/WJCJunction−to− ..
BD680 ,Leaded Power Transistor Darlington
