| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BB304M |
RENESAS |
N/a |
108000 |
 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
| BB304M |
HITACHI/日立 |
N/a |
6000 |
|
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
BB304MDW HITACHI
BB304MDW-TL HITACHI
BB304MDW-TL(DIV) RENESAS
BB304M , Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB304MDW-TL-E , Built in Biasing Circuit MOS FET IC VHF RF Amplifier
BB305C , Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB305MEW-TL-E , Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB404 , Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BD679A ,Leaded Power Transistor DarlingtonBD677/A/679/A/681BD678/A/680/A/682®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ STMicroelectr ..
BD679AS ,NPN Epitaxial Silicon TransistorApplications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respective ..
BD680 ,Leaded Power Transistor DarlingtonTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, R 3.13 °C/WJCJunction−to− ..
