BAW76 ,High Conductance Fast DiodeBAW76 Small Signal DiodeDecember 2004BAW76Small Signal DiodeDO-35Color Band Denotes CathodeAbsolut ..
BAW76 ,High Conductance Fast Diode Document Number 855512 (3) Rev. 3, 14-Feb-01BAW76Vishay SemiconductorsOzone Depleting Substances P ..
BAW78D ,Silicon Switching Diodes (Switching applications High breakdown voltage)BAW78.../BAW79...Silicon Switching Diodes
BAW76
High Conductance Fast Diode
BAW76 Small Signal Diode December 2004 BAW76 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 75 V RRM I Average Rectified Forward Current 300 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C STG T Operating Junction Temperature 175 °C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Unit P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 300 °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max Units V Breakdown Voltage I = 5μA75 V R R V Forward Voltage I = 100mA 1.0 V F F I Reverse Leakage V = 50V 100 nA R R V = 50V, T = 150°C 100 μA R A C Total Capacitance V = 0, f = 1.0MHz 2 pF T R t Reverse Recovery Time I = 10mA, V = 6.0V 2 ns rr F R R = 100Ω, I = 1mA L rr I = I = 10mA, I = 1.0mA, 4 ns F R rr R = 100Ω L ©2004 1 BAW76 Rev. A
