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BAV756S ,High-speed switching diode arrayLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BAV756S ,High-speed switching diode arrayFeaturesn High switching speed: t ≤4ns n Low capacitance: C ≤2pFrr dn Low leakage current n Reverse ..
BAV756S ,High-speed switching diode arrayBAV756S; BAW56 seriesHigh-speed switching diodesRev. 05 — 26 November 2007 Product data sheet1. Pro ..
BAV756S ,High-speed switching diode arrayApplicationsn High-speed switchingn General-purpose switching1.4 Quick reference dataTable 2. Quick ..
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BAV756S-BAW56--BAW56S-BAW56T
High-speed switching diodes
Product profile1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
1.2 Features
1.3 Applications High-speed switching General-purpose switching
1.4 Quick reference data
[1] When switched from IF=10 mA to IR=10 mA; RL= 100 Ω; measured at IR=1 mA. V756S; BA W56 series
High-speed switching diodes
Rev. 05 — 26 November 2007 Product data sheet
Table 1. Product overview
BAV756S SOT363 SC-88 - very small quadruple common
anode/common cathode
BAW56 SOT23 - TO-236AB small dual common anode
BAW56M SOT883 SC-101 - leadless ultra
small
dual common anode
BAW56S SOT363 SC-88 - very small quadruple common
anode/common anode
BAW56T SOT416 SC-75 - ultra small dual common anode
BAW56W SOT323 SC-70 - very small dual common anode High switching speed: trr≤ 4ns n Low capacitance: Cd≤ 2pF Low leakage current n Reverse voltage: VR≤90V Small SMD plastic packages
Table 2. Quick reference data
Per diode reverse current VR=80V - - 0.5 μA reverse voltage - - 90 V
trr reverse recovery time [1] --4 ns
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes Pinning information
Table 3. Pinning
BAV756S anode (diode1) cathode (diode2) common anode (diode 2 and
diode3) cathode (diode3) anode (diode4) common cathode (diode1
and diode4)
BAW56; BAW56T; BAW56W cathode (diode1) cathode (diode2) common anode
BAW56M cathode (diode1) cathode (diode2) common anode
BAW56S cathode (diode1) cathode (diode2) common anode (diode 3 and
diode4) cathode (diode3) cathode (diode4) common anode (diode 1 and
diode2)
006aab103
006aaa144
006aab099
Transparent
top view
006aab099
006aab102
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China Limiting values
Table 4. Ordering information
BAV756S SC-88 plastic surface-mounted package; 6 leads SOT363
BAW56 - plastic surface-mounted package; 3 leads SOT23
BAW56M SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0× 0.6× 0.5 mm
SOT883
BAW56S SC-88 plastic surface-mounted package; 6 leads SOT363
BAW56T SC-75 plastic surface-mounted package; 3 leads SOT416
BAW56W SC-70 plastic surface-mounted package; 3 leads SOT323
Table 5. Marking codes
BAV756S A7*
BAW56 A1*
BAW56M S5
BAW56S A1*
BAW56T A1
BAW56W A1*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per diode
VRRM repetitive peak reverse
voltage
-90 V reverse voltage - 90 V forward current
BAV756S Ts =60°C - 250 mA
BAW56 Tamb≤25°C - 215 mA
BAW56M Tamb≤25°C - 150 mA
BAW56S Ts =60°C - 250 mA
BAW56T Ts =90°C - 150 mA
BAW56W Tamb≤25°C - 150 mA
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
[1] Tj =25 °C prior to surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Single diode loaded. Thermal characteristics
IFRM repetitive peak forward
current 500 mA
IFSM non-repetitive peak forward
current
square wave [1] =1 μs- 4 A =1ms - 1 A=1s - 0.5 A
Ptot total power dissipation [2]
BAV756S Ts =60°C - 350 mW
BAW56 Tamb≤25°C - 250 mW
BAW56M Tamb≤25°C [3]- 250 mW
BAW56S Ts =60°C - 350 mW
BAW56T Ts =90°C [4]- 170 mW
BAW56W Tamb≤25°C - 200 mW
Per device forward current
BAV756S Ts =60°C - 100 mA
BAW56 Tamb≤25°C - 125 mA
BAW56M Tamb≤25°C - 75 mA
BAW56S Ts =60°C - 100 mA
BAW56T Ts =90°C - 75 mA
BAW56W Tamb≤25°C - 130 mA junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 7. Thermal characteristics
Per diode
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]
BAW56 - - 500 K/W
BAW56M [2]- - 500 K/W
BAW56W - - 625 K/W
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method. Characteristics
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
[2] When switched from IF=10 mA to IR=10 mA; RL= 100 Ω; measured at IR=1 mA.
[3] When switched from IF=10 mA; tr =20ns.
Rth(j-sp) thermal resistance from
junction to solder point
BAV756S - - 255 K/W
BAW56 - - 360 K/W
BAW56S - - 255 K/W
BAW56T - - 350 K/W
BAW56W - - 300 K/W
Table 7. Thermal characteristics …continued
Table 8. Characteristics
Tamb =25 °C unless otherwise specified.
Per diode forward voltage [1]=1 mA - - 715 mV=10 mA - - 855 mV=50 mA --1 V= 150 mA - - 1.25 V reverse current VR=25V --30 nA=80V - - 0.5 μA =25V;Tj= 150°C --30 μA =80V;Tj= 150°C - - 150 μA diode capacitance VR=0 V; f=1 MHz - - 2 pF
trr reverse recovery time [2] --4 ns
VFR forward recovery voltage [3]- - 1.75 V
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes Test information
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes Package outline
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