| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BAV99E6327 |
INFINEON|Infineon |
N/a |
56000 |
 |
For high-speed switching applications |
| BAV99E6327 |
SIEMENS |
N/a |
7905 |
|
For high-speed switching applications |
BAV99E6327 , For high-speed switching applications
BAV99-E6327 , For high-speed switching applications
BAV99LT1 ,Small Signal DiodeTHERMAL CHARACTERISTICSA7 MCharacteristic Symbol Max UnitTotal Device Dissipation P 225 mWDFR−5 Bo ..
BAV99LT1G ,Monolithic Dual Switching DiodeTHERMAL CHARACTERISTICSA7 MCharacteristic Symbol Max UnitTotal Device Dissipation P 225 mWDFR−5 Bo ..
BAV99LT3G ,Monolithic Dual Switching DiodeMaximum ratings applied to the device are individual stress limit values (notMARKING DIAGRAMnormal ..
BD4840G , Voltage Detector IC
BD4841G , Voltage Detector IC
BD4845G , Voltage Detector IC
