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BAT68-07 |BAT6807INFN/a3000avaiSilicon RF Schottky Diode


BAT68-07 ,Silicon RF Schottky DiodecharacteristicsBreakdown voltage 8 - - VV(BR)I = 10 µA(BR)Reverse current - - 0.1 µAIRV = 1 VRRever ..
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BD245C , NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS


BAT68-07
Silicon RF Schottky Diode
BAT 68-07
Silicon Schottky Diodes

• For mixer applications in the VHF / UHF range
• For high-speed switching applications4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal Resistance
BAT 68-07
Electrical Characteristics at T
A = 25 °C, unless otherwise specified.
DC characteristics
AC characteristics
BAT 68-07
Forward current I

* Package mounted on alumina
0˚C0FT;TS100150
Reverse current I10
EHD07102V
150CTA=3V8525
Diode capacitance C
T = f (VR)
f = 1MHz0
EHD07103T
Forward current I
F = f (VF)A = Parameter10F
BAT 68-07
Differential forward resistance r
F)
f = 10 kHz Ι 010110mA 210101010
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