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BAT64-02V-BAT64-07 Fast Delivery,Good Price
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BAT64-02V |BAT6402VINFINEONN/a3000avaiSilicon Schottky Diodes
BAT64-02V |BAT6402VINFN/a30000avaiSilicon Schottky Diodes
BAT64-07 |BAT6407INFINEONN/a3000avaiSilicon Schottky Diodes


BAT64-02V ,Silicon Schottky DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64-02V ,Silicon Schottky DiodesBAT64...Silicon Schottky Diodes• For low-loss, fast-recovery, meter protection, bias isolation an ..
BAT64-02W ,Schottky DiodesCharacteristics40 - - VBreakdown voltage V(BR)I = 10 µA(BR)Reverse current I µARV = 30 V - - 2RV ..
BAT64-04 ,Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64-04E6327 , Silicon Schottky Diodes
BAT64-04W ,Schottky DiodesCharacteristics40 - - VBreakdown voltage V(BR)I = 10 µA(BR)Reverse current I µARV = 30 V - - 2RV ..
BD239ATU ,NPN Epitaxial Silicon TransistorApplications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Ep ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C. , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.


BAT64-02V-BAT64-07
Silicon Schottky Diodes
BAT64...
Silicon Schottky Diodes

• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAT64BAT64-06
BAT64-06W
BAT64-02V
BAT64-02W
BAT64-05
BAT64-05W
BAT64-04
BAT64-04W
BAT64-07
ESD: Electrostatic discharge sensitive device, observe handling precaution!

* Preliminary data
BAT64...
Maximum Ratings at T
A = 25°C, unless otherwise specified
Thermal Resistance

1For calculation of RthJA please refer to Application Note Thermal Resistance
BAT64...
Electrical Characteristics at T
A = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BAT64...
Diode capacitance C

f = 1MHz0R20V30
Reverse current I

0102030EHB00058R= 125
Forward current I
F = ƒ (VF)A = ParameterF
Forward current I
F = ƒ (TS)
BAT64W
50
100
150
200
300
BAT64...
Forward current I
F = ƒ (TS)
BAT64-02V, BAT64-02W
50
100
150
200
300
Forward current I
F = ƒ (TS)
BAT64-04, BAT64-06, BAT64-07
50
100
150
200
300
Forward current I
F = ƒ (TS)
BAT64-04W, BAT64-06W
50
100
150
200
300
Forward current I
F = ƒ (TS)
BAT64-05
50
100
150
200
300
BAT64...
Forward current I
F = ƒ (TS)
BAT64-05W
50
100
150
200
300
Permissible Pulse Load
Fmax/ IFDC = ƒ (tp)
BAT64-02V, BAT64-02W0 10 10 10
Fmax
FDC
Permissible Puls Load R
thJS = ƒ (tp)
BAT64-02V, BAT64-02W
10 0
-1 10 10 10 10 10
thJS
Permissible Puls Load R
thJS = ƒ (tp)
BAT64-04W, BAT64-06W0
-1 10 10 10 10 10
thJS
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