| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BAT15-04 |
INFINEON|Infineon |
N/a |
33000 |
 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
BAT15-04 E6327 Infineon
BAT15-04RE6327 INFINEON
BAT15-04W INFINEON,Silicon RF Schottky Diode for DBS mix...
BAT15-04W E6327 Infineon
BAT15-05W E6327 INFINEON
BAT15-05WE6327 INFINEON
BAT15-07LRH E6328 INFINEON
BAT15-098LRH E6327 INFINEON
BAT15-099 SIEMENS,Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type)
BAT15-099LRH E6327 infineon
BAT15-099R E6327 INFINEON
BAT15-099R/S6 LNFINEON
BAT150S PHI
BAT15-04 , Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
BAT15V-02V ,Schottky DiodesRev. 1.1, 27-Apr-04 30.3 (0.012)0.15 (0.006)0.6 (0.023)BAT15V-02VVISHAYVishay SemiconductorsOzone D ..
BAT160A ,Schottky barrier double diodesAPPLICATIONSconfiguration (symbol).• Low power switched-mode powersuppliesage 4• Rectification4• Po ..
BAT160A ,Schottky barrier double diodes
BAT160S ,Schottky barrier double diodesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BCW66 ,NPN Low Sat Transistor
BCW66 ,NPN Low Sat TransistorBCW66SMALL SIGNAL NPN TRANSISTORSType MarkingBCW66F EFBCW66G EGBCW66H EHn SILICON EPITAXIALPLANAR N ..
BCW66F ,General Purpose TransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 32 - -BCW65C B45 - ..
