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BAT120ANXPN/a880avaiSchottky barrier double diodes
BAT120ANXP/PHILIPSN/a7000avaiSchottky barrier double diodes
BAT120CNXPN/a2000avaiSchottky barrier double diodes
BAT120SNXP/PHILIPSN/a1000avaiSchottky barrier double diodes


BAT120A ,Schottky barrier double diodesELECTRICAL CHARACTERISTICST = 25 °C unless otherwise specified.ambSYMBOL PARAMETER CONDITIONS TYP. ..
BAT120C ,Schottky barrier double diodesLIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER ..
BAT120S ,Schottky barrier double diodesAPPLICATIONS• Low power switched-mode power supplies• Rectificationhandbook, halfpage4• Polarity pr ..
BAT140A ,Schottky barrier double diodes
BAT140C ,Schottky barrier double diodes
BAT140S ,Schottky barrier double diodes
BCW61DLT1 ,General Purpose TransistorsTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit(1)Total Device Dissipation FR–5 Board P 225 m ..
BCW65ALT1 ,Small Signal NPNELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BCW65C ,Surface mount Si-Epitaxial PlanarTransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 32 - -BCW65C B45 - ..
BCW66 ,NPN Low Sat Transistor
BCW66 ,NPN Low Sat TransistorBCW66SMALL SIGNAL NPN TRANSISTORSType MarkingBCW66F EFBCW66G EGBCW66H EHn SILICON EPITAXIALPLANAR N ..
BCW66F ,General Purpose TransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 32 - -BCW65C B45 - ..


BAT120A-BAT120C-BAT120S
Schottky barrier double diodes

NXP Semiconductors Product data sheet
Schottky barrier double diodes BAT120 series
FEATURES
Low switching losses Capability of absorbing very high surge current Fast recovery time Guard ring protected Plastic SMD package.
APPLICATIONS
Low power switched-mode power supplies Rectification Polarity protection.
DESCRIPTION

Planar Schottky barrier double diodes encapsulated in a
SOT223 plastic SMD package.
MARKING
PINNING
NXP Semiconductors Product data sheet
Schottky barrier double diodes BAT120 series
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.
Note
Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
Refer to SOT223 standard mounting conditions.
NXP Semiconductors Product data sheet
Schottky barrier double diodes BAT120 series
NXP Semiconductors Product data sheet
Schottky barrier double diodes BAT120 series
PACKAGE OUTLINE
NXP Semiconductors Product data sheet
Schottky barrier double diodes BAT120 series
DATA SHEET STATUS
Notes
Please consult the most recently issued document before initiating or completing a design. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
DISCLAIMERS
General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are

not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and
conditions of commercial sale, as published at
http:///profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)

described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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