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BAR42STN/a100000avaiSMALL SIGNAL SCHOTTKY DIODES


BAR42 ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR42FILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR43 ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BAR43A ,Schottky DiodesBAR 42BAR 43, A, C, SSMALL SIGNAL SCHOTTKY DIODESK AK1N.C.A K2BAR42/BAR43 BAR43AA1KK2A1 K1DESCRIPT ..
BAR43AFILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR43C ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BCP53-16 ,PNP Silicon AF Transistors (For AF driver and output stages High collector current)General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packa ..
BCP53-16T1 ,PNP Silicon Epitaxial Transistors• High Current: 1.5 Amps• NPN Complement is BCP56MEDIUM POWER• The SOT-223 Package can be soldered ..
BCP53-16T1G , PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT
BCP53T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
BCP53T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTMAXIMUM RATINGS (T = 25°C unless otherwise noted)CMARKING DIAGRAMRating Symbol Value Unit4Collector ..
BCP54 ,45 V, 1 A NPN medium power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..


BAR42
SMALL SIGNAL SCHOTTKY DIODES
BAR42FILM
BAR43/A/C/SFILM

SMALL SIGNAL SCHOTTKY DIODES
Note 1:
for double diodes, Ptot is the total power dissipation of both diodes.
ABSOLUTE RATINGS
(limiting values)
* : dPtot
dTj Rthj a< − thermal runaway condition for a diode on its own heatsink
* Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE

General purpose metalto silicon diodes featuring
very low turn-on voltage and fast switching.
DESCRIPTION
BAR42FILM BAR43/A/C/SFILM
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS

0.00 0.050.00E+0
2.00E-3
4.00E-3
6.00E-3
8.00E-3
1.00E-2
1.20E-2
1.40E-2
1.60E-2
1.80E-2
2.00E-2
IFM(A)
Fig. 1-1:
Forward voltage drop versus forward
current (typical values, low level). 0.1
5E-1
IFM(A)
Fig. 1-2:
Forward voltage drop versus forward
current (typical values, high level).
Pulse test:*tp= 380μs,δ < 2%tp=5 ms,δ <2%
* Detection effeciency
BAR42FILM BAR43/A/C/SFILM1E-2
1E-1
1E+0
1E+1
1E+2
IR(μA)
Fig.2:
Reverse leakage current versus reverse
voltage applied (typical values). 25
1E+1
1E+2
1E+3
1E+4
IR(μA)
Fig.3:
Reverse leakage current versus junction
temperature.1
C(pF)
Fig. 4:

voltage applied (typical values). 1E-2
Zth(j-a)/Rth(j-a)5: Relativeto ambient with recommendedpad150
Rth(j-a) (°C/W)
Fig.
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35μm).
BAR42FILM BAR43/A/C/SFILM
PACKAGE MECHANICAL DATA

SOT-23 (Plastic)
Informationfurnishedis believedtobe accurateandreliable. However,STMicroelectronics assumesno responsibility fortheconsequencesof
useof suchinformation norforanyinfringementof patents orother rights ofthird parties whichmayresult fromits use.Nolicenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems without express written
approval of STMicroelectronics.
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FOOT PRINT DIMENSIONS

Epoxy meets UL94,V0
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