BA1F4M ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOL
CHARACTERISTIC
NPN SILICON TRANSISTOR
BA1 ..
BA1F4M ,NPN SILICON TRANSISTORs designed for use in medium speed switching
>uilt-in type NPN transistor equivalent circuit.
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BA1F4N ,NPN SILICON TRANSISTORNPNSILICON TRANSISTOR
_ BA1 F4N
BulEiiiiC
DESCRIPTION The BA1F4N- is designed for use in m ..
BA1L3M ,Compound transistor !! COMPOUND TRANSISTOR ..
BA1L3N ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBA1L3Non-chip resistor NPN silicon epitaxial transistorFor mid-speed ..
BA1L3Z ,NPN SILICON TRANSISTORNPN SILICON TRANSISTOR
BA1 L3Z
DESCRIPTION The BAIL3Z is designed for use in medium speed swi ..
BC849 , 0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 200
BC849 , 0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 200
BC849BLT1 ,General Purpose TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC849BLT1 ,General Purpose TransistorMaximum ratings are those values beyond which device damage can occur.MARKING DIAGRAM
BC849BLT1G , General Purpose Transistors
BC849BMTF ,NPN Epitaxial Silicon TransistorApplications• Suitable for automatic insertion in thick and thin-film circuits• Low Noise: BC849, B ..
BA1F4M
