| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| B82422-A3561-K100 |
EPCOS |
N/a |
1500 |
 |
SMT inductors |
| B82422-A3561-K100 |
|
N/a |
1500 |
|
SMT inductors |
B82422H1322K100V1
B82422H1322K100V1 EPCOS
B82422T1103J EPCOS
B82422-T1103-J EPCOS
B82422T1103K EPCOS
B82422T1103K
B82422-T1103-K100
B82422-T1103-K100 EPCOS
B82422T1121K8 N/A
B82422T1154K8 EPCOS
B82422T1154KJ EPCOS
B82422T1154KJ
B82422T1184J EPCOS
B82422T1271K EPCOS
B82422-T1331-J SIEMENS
B82422T1334J EPCOS
B82422T1334J
B82422T1393K EPCOS
B82422-T1471-K EPCOS
B82422T1472J
B82422T1473J EPCOS
B82422-T1562-K EPCOS
B82422-T1562-K
B82422T1563J
B82422T1563J EPCOS
B82422T1681K EPCOS
B82422T1681K
B82422T1683K EPCOS
B82432A1102K EPCOS
B82422-A3561-K100 , SMT inductors
B82432-A1102-K , Size 1812 (EIA) or 4532 (IEC) Rated inductance 1,0 to 1000 mH Rated current 55 to 600 mA
B82432-A1102-K , Size 1812 (EIA) or 4532 (IEC) Rated inductance 1,0 to 1000 mH Rated current 55 to 600 mA
B82432A1104K , SMT inductors
B82432-A1104-K , SMT inductors
BC449 ,V(ceo): 100V; V(cbo): 100V; V(ebo): 5V; voltage NPN silicon transistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC449 ,V(ceo): 100V; V(cbo): 100V; V(ebo): 5V; voltage NPN silicon transistorMAXIMUM RATINGS BC449, A, BRating Symbol BC BC BC UnitCASE 29-04, STYLE 17445 447 449Collector-Emit ..
BC487 ,NPN SILICON PLANAR EPITAXIAL TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
