| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| B5817WS |
|
N/a |
120000 |
 |
For Use in Low Voltage, High Frequency Inverters High Surge Current Capability |
| B5817WS |
BL |
N/a |
2000 |
|
For Use in Low Voltage, High Frequency Inverters High Surge Current Capability |
| B5817WS |
CJ |
N/a |
249000 |
|
For Use in Low Voltage, High Frequency Inverters High Surge Current Capability |
B5817WS SJ
B5817WS SJ CJ
B5817WSJ
B5817WSJ 长电
B5817WSJ Sanyo正品
B5817W-SJ Changdian
B5817WSSJ
B5817WSSJ 原
B5817WS-SJ Changdian
B5817WS , For Use in Low Voltage, High Frequency Inverters High Surge Current Capability
B5818W ,Conductor Holdings Limited - Schottky Barrier Diode
B5818W ,Conductor Holdings Limited - Schottky Barrier Diode
B5818WS , For Use in Low Voltage, High Frequency Inverters High Surge Current Capability
B5818WS , For Use in Low Voltage, High Frequency Inverters High Surge Current Capability
BB502C , Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB502M , Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB502MBS-TL-E , Built in Biasing Circuit MOS FET IC UHF RF Amplifier
