AT-31625-TR1 ,4.8 V NPN Common Emitter Medium Power Output Transistor4.8 V NPN Common EmitterMedium Power Output TransistorTechnical DataAT-31625
AT-31625-TR1 ,4.8 V NPN Common Emitter Medium Power Output TransistorApplicationsHewlett Packard’s 10 GHz F Self-t• Medium Power DriverAligned-Transistor (SAT) process. ..
AT-31625-TR1 ,4.8 V NPN Common Emitter Medium Power Output TransistorFeatures MSOP-3 Surface Mount Description• 4.8 Volt Operation Hewlett Packard’s AT-31625 is aPlasti ..
AT-31625-TR1 ,4.8 V NPN Common Emitter Medium Power Output Transistorfeatures• -31 dBc IMD @ P of3 out+28␣ dBm CW output power when21␣ dBm per Tone, 900␣ MHz,operated a ..
AT-32011 ,Low Current, High Performance NPN Silicon Bipolar TransistorAT-32011, AT-32033 Absolute Maximum Ratings[2]Absolute Thermal Resistance :[1]Symbol Parameter Unit ..
AT-32011 ,Low Current, High Performance NPN Silicon Bipolar TransistorAT-32011, AT-32033 Absolute Maximum Ratings[2]Absolute Thermal Resistance :[1]Symbol Parameter Unit ..
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AT-31625-TR1
