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AM1214-130 |AM1214130STN/a18avaiRF POWER TRANSISTORS L-BAND RADAR APPLICATIONS


AM1214-130 ,RF POWER TRANSISTORS L-BAND RADAR APPLICATIONSAPPLICATIONSTARGET DATA• REFRACTORY /GOLD METALLIZATION• EMITTER SITE BALLASTING• LOW RF THERMAL RE ..
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AM1214-130
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
1/4
TARGET DATA

July 2000
AM1214-130

RF POWER TRANSISTORS
L-BAND RADAR APPLICATIONS REFRACTORY /GOLD METALLIZATION EMITTER SITE BALLASTING LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 130 W MIN. WITH 8.0 dB GAIN 1215-1400 MHz OPERATION
THERMAL DATA

* Applies only to rated RF amplifier operation: 150 microsec / 10%
AM1214-130
ELECTRICAL SPECIFICATION (TCASE = 25°C)
STATIC
DYNAMIC @ 150 MICROSEC / 10 %
DYNAMIC @ 500 MICROSEC / 10 %
3/4
AM1214-130
M259 (.400 x .500 SUPER WIDE 2/L HERM. W/FLG) MECHANICAL DATA
AM1214-130
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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