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ADR293ERADIN/a31avaiLow Noise Micropower Precision Voltage Reference
ADR293ER-REEL |ADR293ERREELADN/a5000avaiLow Noise Micropower Precision Voltage Reference
ADR293FRADIN/a6avaiLow Noise Micropower Precision Voltage Reference
ADR293GRADIN/a1078avaiLow Noise Micropower Precision Voltage Reference


ADR293ER-REEL ,Low Noise Micropower Precision Voltage ReferenceSPECIFICATIONS (V = 16.0 V, T = 2408C ≤ T ≤ 11258C unless otherwise noted)S A AParameter Symbol Con ..
ADR293FR ,Low Noise Micropower Precision Voltage ReferenceSPECIFICATIONS (V = 16.0 V, T = 2258C ≤ T ≤ 1858C unless otherwise noted)S A AParameter Symbol Cond ..
ADR293GR ,Low Noise Micropower Precision Voltage ReferenceSpecifications subject to change without notice.–2– REV. 0ADR293WAFER TEST LIMITS (V = 16.0 V, T = ..
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ADR293ER-ADR293ER-REEL-ADR293FR-ADR293GR
Low Noise Micropower Precision Voltage Reference
PIN CONFIGURATIONS
8-Lead Narrow Body SO
(R Suffix)
VIN
GND
NC = NO CONNECT
8-Lead TSSOP
(RU Suffix)
VIN
GND
NC = NO CONNECT
3-Lead TO-92
(T9 Suffix)
VIN
GND
VOUT
BOTTOM VIEW

REV.0Low Noise Micropower
Precision Voltage Reference
FEATURES
Voltage Output 5.0 V
6.0 V to 15 V Supply Range
Supply Current 15 mA Max
Initial Accuracy 63 mV Max
Temperature Coefficient 8 ppm/8C Max
Low Noise 15 mV p–p Typ (0.1 Hz to 10 Hz)
High Output Current 5 mA Min
Temperature Range 2408C to 11258C
REF02/REF19x Pinout
APPLICATIONS
Portable Instrumentation
Precision Reference for 5 V Systems
A/D and D/A Converter Reference
Solar Powered Applications
Loop-Current Powered Instruments
GENERAL DESCRIPTION

The ADR293 is a low noise, micropower precision voltage
reference that utilizes an XFET™ (eXtra implanted junction
FET) reference circuit. The new XFET architecture offers sig-
nificant performance improvements over traditional bandgap
and Zener-based references. Improvements include: one quarter
the voltage noise output of bandgap references operating at the
same current, very low and ultralinear temperature drift, low
thermal hysteresis and excellent long-term stability.
The ADR293 is a series voltage reference providing stable and
accurate output voltage from a 6.0 V supply. Quiescent current
is only 15 μA max, making this device ideal for battery powered
instrumentation. Three electrical grades are available offering
initial output accuracy of ±3 mV, ±6 mV, and ±10 mV. Tem-
perature coefficients for the three grades are 8 ppm/°C, 15 ppm/°C
and 25 ppm/°C max. Line regulation and load regulation are typi-
cally 30 ppm/V and 30 ppm/mA, maintaining the reference’s over-
all high performance.
The ADR293 is specified over the extended industrial tempera-
ture range of –40°C to +125°C. This device is available in the
8-lead SOIC, 8-lead TSSOP and the TO-92 package.
XFET is a trademark of Analog Devices, Inc.
ADR293–SPECIFICATIONS
ELECTRICAL SPECIFICATIONS

LINE REGULATION
LOAD REGULATION
ELECTRICAL SPECIFICATIONS

LINE REGULATION
LOAD REGULATION
ELECTRICAL SPECIFICATIONS

LINE REGULATION
LOAD REGULATION
SUPPLY CURRENT
Specifications subject to change without notice.
(VS = 16.0 V, TA = 1258C unless otherwise noted)
(VS = 16.0 V, TA = 2408C ≤ TA ≤ 11258C unless otherwise noted)
(VS = 16.0 V, TA = 2258C ≤ TA ≤ 1858C unless otherwise noted)
WAFER TEST LIMITS
NOTES
Electrical tests are performed as wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
Specifications subject to change without notice.
DICE CHARACTERISTICS

Die Size 0.074 3 0.052 inch, 3848 sq. mils
(1.88 3 1.32 mm, 2.48 sq. mm)
Transistor Count: 52
(VS = 16.0 V, TA = 1258C unless otherwise noted)
VIN
VOUT(SENSE)
VOUT(FORCE)
GND
ADR293
ABSOLUTE MAXIMUM RATINGS1

Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 V
Output Short-Circuit Duration. . . . . . . . . . . . . . . . . Indefinite
Storage Temperature Range
T9, R, RU Package. . . . . . . . . . . . . . . . . 265°C to 1150°C
Operating Temperature Range. . . . . . . . . . 240°C to 1125°C
Junction Temperature Range
T9, R, RU Package. . . . . . . . . . . . . . . . . 265°C to 1125°C
Lead Temperature (Soldering, 60 sec). . . . . . . . . . . . 1300°C
NOTE
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADR293 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
NOTEθJA is specified for worst case conditions, i.e., θJA is specified for device in socket
for PDIP, and θJA is specified for a device soldered in circuit board for SOIC
packages.
ORDERING GUIDE
TEMPERATURE – 8C
4.994
250125225
OUTPUT VOLTAGE – V255075100
4.996

Figure 1.VOUT vs. Temperature
INPUT VOLTAGE – V0162
SUPPLY CURRENT –
8101214
Figure 2.Supply Current vs. Input Voltage
TEMPERATURE –
8C250125225
SUPPLY CURRENT –
255075100
Figure 3.Supply Current vs. Temperature
TEMPERATURE –
8C
100

250125225
LINE REGULATION – ppm/V255075100

Figure 4.Line Regulation vs. Temperature
TEMPERATURE –
8C
100
250125225
LINE REGULATION – ppm/V255075100

Figure 5.Line Regulation vs. Temperature
Figure 6.Minimum Input-Output Voltage Differential vs.
Load Current
ADR293
TEMPERATURE –
8C
160
250125225
LOAD REGULATION – ppm/mA255075100
120

Figure 7.Load Regulation vs. Temperature
SOURCING LOAD CURRENT – mA
0101
OUT
FROM NOMINAL – mV

Figure 8.ΔVOUT from Nominal vs. Load Current
VOLTAGE NOISE DENSITY – nV/ Hz
FREQUENCY – Hz
800

Figure 9.Voltage Noise Density
FREQUENCY – Hz
RIPPLE REJECTION – dB
100

Figure 10.Ripple Rejection vs. Frequency
FREQUENCY – Hz100
OUTPUT IMPEDANCE –
10k
Figure 11.Output Impedance vs. Frequency
10mV p-p

Figure 12.0.1 Hz to 10 Hz Noise
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