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ADG884BCPZ-REEL |ADG884BCPZREELADI/PBFN/a1004avai0.5 Ω CMOS Dual 2:1 MUX/SPDT Audio Switch
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ADG884BCPZ-REEL-ADG884BCPZ-REEL7-ADG884BRMZ-ADG884BRMZ-REEL7
0.5 Ω CMOS Dual 2:1 MUX/SPDT Audio Switch
0.5 Ω CMOS Dual
2:1 MUX/SPDT Audio Switch

Rev. 0
FEATURES
1.8 V to 5.5 V operation
Ultralow on resistance:
0.34 Ω typical
0.38 Ω max at 5 V supply
Excellent audio performance, ultralow distortion:
0.1 Ω typical
0.15 Ω max RON flatness
High current-carrying capability:
400 mA continuous
600 mA peak current at 5 V supply
Rail-to-rail switching operation
Typical power consumption (<0.1 µW)
APPLICATIONS
Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communications systems
FUNCTIONAL BLOCK DIAGRAM

S1A
S1B
S2A
S2B
IN2
SWITCHES SHOWN FOR A LOGIC 1 INPUT
IN1
Figure 1.
GENERAL DESCRIPTION

The ADG884 is a low voltage CMOS device containing two
independently selectable single-pole, double-throw (SPDT)
switches. This device offers ultralow on resistance of less than
0.4 Ω over the full temperature range, making the part an ideal
solution for applications that require minimal distortion
through the switch. The ADG884 also has the capability of
carrying large amounts of current, typically 600 mA at 5 V
operation.
The ADG884 is available in a 10 bump, 2.0 mm × 1.50 mm
WLCSP package, a 10-lead LFCSP package, and a 10-lead
MSOP package. These tiny packages make the ADG884 the
ideal solution for space-constrained applications.
When on, each switch conducts equally well in both directions
and has an input signal range that extends to the supplies. The
ADG884 exhibits break-before-make switching action.
PRODUCT HIGHLIGHTS

1. Single 1.8 V to 5.5 V operation.
2. High current handling capability (400 mA continuous
current at 3.3 V).
3. 1.8 V logic-compatible.
4. Low THD + N (0.01% typ).
5. Tiny 2 mm × 1.5 mm WLCSP package and 3 mm × 3 mm
10-lead LFCSP package.
Table 1. ADG884 Truth Table

TABLE OF CONTENTS
Specifications.....................................................................................3
Absolute Maximum Ratings............................................................6
ESD Caution..................................................................................6
Pin Configurations and Function Descriptions...........................7
Typical Performance Characteristics.............................................8
Terminology....................................................................................11
Test Circuits.....................................................................................12
Outline Dimensions.......................................................................14
Ordering Guide..........................................................................15
REVISION HISTORY
10/04—Revision 0: Initial Version

SPECIFICATIONS
VDD = 5 V ± 10%, GND = 0 V, unless otherwise noted.1
Table 2.

Temperature range of the B version is −40°C to +85°C.
2 Guaranteed by design, not subject to production test.
VDD = 3.4 V to 4.2 V; GND = 0 V, unless otherwise noted.1
Table 3.


1 Temperature range of the B version is −40°C to +85°C. Guaranteed by design, not subject to production test.
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.1
Table 4.


1 Temperature range of the B version is −40°C to +85°C. Guaranteed by design, not subject to production test.
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.

Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
VDD
IN1
S1B
S2A
IN2
S2B
GND
ADG884
TOP VIEW
(Not to Scale)

05028-002
Figure 2. LFCSP and MSOP Pin Configuration
OPPOSITE SIDE)

ADG884
TOP VIEW
Figure 3. WLCSP Pin Configuration
Table 6. Pin Function Descriptions

TYPICAL PERFORMANCE CHARACTERISTICS
SIGNAL RANGE
ESISTA
0.05012345

Figure 4. On Resistance vs. VD (VS), VDD = 4.2 V to 5.5 V
SIGNAL RANGE
ON RE
ANCE
0.1000.51.01.52.03.02.5

Figure 5. On Resistance vs. VD (VS), VDD = 2.7 V to 3.3 V
SIGNAL RANGE
ON RE
ANCE
0.0501234

05028-006
Figure 6. On Resistance vs. VD (VS) for Different Temperature, VDD = 5 V
SIGNAL RANGE
ON RE
ANCE
0.1500.51.01.52.02.53.0

Figure 7. On Resistance vs. VD (VS) for Different Temperature, VDD = 3.3 V
TEMPERATURE
AKAGE
CURRE
NT (nA)01020304050806070

Figure 8. Leakage Current vs. Temperature, VDD = 5 V
TEMPERATURE
AKAGE
CURRE
NT (nA)01060504030208070

Figure 9. Leakage Current vs. Temperature, VDD = 4.2 V
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