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ADG736BRMADIN/a80avaiCMOS Low Voltage 4 ohm Dual SPDT Switch


ADG736BRM ,CMOS Low Voltage 4 ohm Dual SPDT SwitchGENERAL DESCRIPTION PRODUCT HIGHLIGHTSThe ADG736 is a monolithic device comprising two indepen- 1. ..
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ADG736BRM
CMOS Low Voltage 4 ohm Dual SPDT Switch
REV.0
CMOS
Low Voltage 4 V Dual SPDT Switch
FUNCTIONAL BLOCK DIAGRAM
FEATURES
+1.8 V to +5.5 V Single Supply
2.5 V (Typ) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
10-Lead mSOIC Package
Fast Switching Times
tON 16 ns
tOFF 8 ns
Typical Power Consumption (<0.01 mW)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Audio and Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION

The ADG736 is a monolithic device comprising two indepen-
dently selectable CMOS SPDT switches. These switches are
designed on a submicron process that provides low power dissi-
pation yet gives high switching speed, low on resistance, low
leakage currents and wide input signal bandwidth.
The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.
The ADG736 can operate from a single +1.8 V to +5.5 V sup-
ply, making it ideally suited to portable and battery powered
instruments.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the power supplies.
The ADG736 exhibits break-before-make switching action.
The ADG736 is available in a 10-lead mSOIC package.
PRODUCT HIGHLIGHTS
+1.8 V to +5.5 V Single Supply Operation.
The ADG736 offers high performance, including low on
resistance and fast switching times and is fully specified and
guaranteed with +3 V and +5 V supply rails.Very Low RON (4.5 W Max at 5 V, 8 W Max at 3 V).
At supply voltage of +1.8 V, RON is typically 35 W over the
temperature range.Low On-Resistance Flatness.–3 dB Bandwidth >200 MHz.Low Power Dissipation.
CMOS construction ensures low power dissipation.Fast tON/tOFF.Break-Before-Make Switching Action.10-Lead mSOIC Package.
ADG736–SPECIFICATIONS1(VDD = +5 V 6 10%, GND = 0 V. All Specifications –408C to +858C, unless otherwise
noted.)

POWER REQUIREMENTS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG736
SPECIFICATIONS1

LEAKAGE CURRENTS
POWER REQUIREMENTS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +3 V 6 10%, GND = 0 V. All Specifications –408C to +858C, unless otherwise noted.)
ADG736
CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG736 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS1

(TA = +25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . . .–0.3 V to VDD +0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°CSOIC Package, Power Dissipation . . . . . . . . . . . . . . .315 mWJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .205°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 kV
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability. Only one absolute maxi-
mum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ORDERING GUIDE

NOTESBrand = Due to small package size, these three characters represent the part
number.RM = mSOIC.
PIN CONFIGURATION
(10-Lead mSOIC)
IN1
S1A
GND
S2A
IN2
S1B
VDD
S2B
TERMINOLOGY

ID, IS (ON)
VD (VS)
CS (OFF)
Table I.Truth Table
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts
0.5
1.51.522.533.544.55

Figure 1.On Resistance as a Function of VD (VS) Single
Supplies
VD OR VS – SOURCE OR DRAIN VOLTAGE – Volts

0.51.522.5

Figure 2.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts
0.5
1.51.522.533.544.55

Figure 3.On Resistance as a Function of VD (VS) for
Figure 4.Supply Current vs. Input Switching Frequency
Figure 5.On Response vs. Frequency
Figure 6.Off Isolation vs. Frequency
ADG736
APPLICATIONS
VDD
IN1
75V
75V
75V
CH1
250V

Figure 8.Using the ADG736 to Select Between Two Video Signals
CROSSTALK
dB

Figure 7.Crosstalk vs. Frequency
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