AD8022 ,Dual Low Noise, Low Distortion, High Speed AmplifierSPECIFICATIONS (@ 25C, V = 2.5 V, R = 500 , G = +1, T = –40C, T = +85C, unless otherwise noted ..
AD8022 ,Dual Low Noise, Low Distortion, High Speed AmplifierAPPLICATIONSReceiver for ADSL, VDSL, HDSL, and Proprietary xDSLSystemsLow Noise Instrumentation Fro ..
AD8022AR ,Dual High-Speed Low-Noise Op AmpsSPECIFICATIONSParameter Conditions Min Typ Max UnitDYNAMIC PERFORMANCE–3 dB Small Signal Bandwidth ..
AD8022ARM ,Dual High-Speed Low-Noise Op AmpsSPECIFICATIONSParameter Conditions Min Typ Max UnitDYNAMIC PERFORMANCE–3 dB Small Signal Bandwidth ..
AD8022ARM-REEL , Dual High Speed, Low Noise Op Amp
AD8022AR-REEL ,Dual Low Noise, Low Distortion, High Speed AmplifierAPPLICATIONSReceiver for ADSL, VDSL, HDSL, and Proprietary xDSLSystemsLow Noise Instrumentation Fro ..
ADM708RAN ,+3 V, Voltage Monitoring uP Supervisory CircuitsFEATURESPrecision Supply-Voltage Monitor+2.63 V (ADM706P/R, ADM708R)WATCHDOGWATCHDOGWATCHDOGWATCHDO ..
ADM708RAR ,+3 V, Voltage Monitoring uP Supervisory CircuitsFEATURESPrecision Supply-Voltage Monitor+2.63 V (ADM706P/R, ADM708R)WATCHDOGWATCHDOGWATCHDOGWATCHDO ..
ADM708RARZ , 3 V, Voltage Monitoring Microprocessor Supervisory Circuits
ADM708RARZ-REEL , 3 V, Voltage Monitoring Microprocessor Supervisory Circuits
ADM708RARZ-REEL , 3 V, Voltage Monitoring Microprocessor Supervisory Circuits
ADM708SAN ,+3 V, Voltage Monitoring uP Supervisory Circuits+3 V, Voltage MonitoringamP Supervisory CircuitsADM706P/R/S/T, ADM708R/S/TFUNCTIONAL BLOCK DIAGRAMS
AD8022
Dual Low Noise, Low Distortion, High Speed Amplifier
REV.A
Dual High Speed
Low Noise Op Amps
FUNCTIONAL BLOCK DIAGRAM
SOIC, MSOP
FEATURES
Low Power Amplifiers Provide Low Noise and Low
Distortion, Ideal for xDSL Modem Receiver
Wide Supply Range: +5 V, �2.5V to �12 V Voltage Supply
Low Power Consumption
4.0 mA/Amp
Voltage Feedback
Ease of Use
Lower Total Noise (Insignificant Input Current Noise
Contribution Compared to Current Feedback Amps)
Low Noise and Distortion
2.5 nV/√Hz Voltage Noise @ 100 kHz
1.2 pA/√Hz Current Noise
MTPR < –66 dBc (G = +7)
SFDR 110 dB @ 200 kHz
High Speed
130 MHz Bandwidth (–3 dB), G = +1
Settling Time to 0.1%, 68 ns
50 V/�s Slew Rate
High Output Swing�10.1 V on �12 V Supply
Low Offset Voltage, 1.5 mV Typical
APPLICATIONS
Receiver for ADSL, VDSL, HDSL, and Proprietary xDSL
Systems
Low Noise Instrumentation Front End
Ultrasound Preamp
Active Filters
16-Bit ADC Buffer
PRODUCT DESCRIPTIONThe AD8022 consists of two low noise, high speed, voltage
feedback amplifiers. Each amplifier consumes only 4.0 mA of
quiescent current yet has only 2.5 nV/√Hz of voltage noise. These
dual amplifiers provide wideband, low distortion performance,
with high output current optimized for stability when driving ca-
pacitive loads. Manufactured on ADI’s high voltage generation
of XFCB bipolar process, the AD8022 operates on a wide range
of supply voltages. The AD8022 is available in both an 8-lead MSOP
and an 8-lead SOIC package. Fast overvoltage recovery and
wide bandwidth make the AD8022 ideal as the receive channel
front end to an ADSL, VDSL or proprietary xDSL transceiver design.
In an xDSL line interface circuit, the AD8022’s op amps can be
configured as the differential receiver from the line transformer or
as independent active filters.
Figure 1.Current and Voltage Noise vs. Frequency
AD8022–SPECIFICATIONS
(@ 25�C, VS = �12 V, RL = 500 �, G = +1, TMIN = –40�C, TMAX = +85�C, unless
otherwise noted.)NOTES
1FPBW= Slew Rate/(2 p VPEAK).
2Multitone testing performed with 800 mV rms across a 500 W load at Points A and B on TPC 20.
Specifications subject to change without notice.
(@ 25�C, VS = �2.5 V, RL = 500 �, G = +1, TMIN = –40�C, TMAX = +85�C, unless otherwise noted.)DC PERFORMANCE
INPUT CHARACTERISTICS
NOTES
1FPBW = Slew Rate/(2 p VPEAK).
2Multitone testing performed with 800 mV rms across a 500 W load at Points A and B on TPC 20.
Specifications subject to change without notice.
SPECIFICATIONSAD8022
AD8022
ORDERING GUIDE
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8022 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
AMBIENT TEMPERATURE – �C
MAXIMUM POWER DISSIPATION – W
0.5–40–30–20–100102030405060708090Figure 2.Plot of Maximum Power Dissipation vs.
Temperature
ABSOLUTE MAXIMUM RATINGS1Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26.4 V
Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 1.6 W
MSOP Package (RM) . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±0.8 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range RM, R . . . . . . –65∞C to +125∞C
Operating Temperature Range (A Grade) . . . –40∞C to +85∞C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300∞C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for the device in free air:
8-Lead SOIC Package: qJA = 160∞C/W.
8-Lead MSOP Package: qJA = 200∞C/W.
MAXIMUM POWER DISSIPATIONThe maximum power that can be safely dissipated by the AD8022
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150∞C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change
in the stresses exerted on the die by the package. Exceeding a
junction temperature of 175∞C for an extended period can result
in device failure.
While the AD8022 is internally short circuit protected, this may not
be sufficient to guarantee that the maximum junction temperature
(150∞C) is not exceeded under all conditions. To ensure proper
operation, it is necessary to observe the maximum power derat-
ing curves.
FREQUENCY – MHz
0.1101005001TPC 1.Frequency Response vs. RF, G=+1,
VS = ±12 V,VIN= 63 mV p-p
TPC 2.Fine-Scale Gain Flatness vs. Frequency, G = +2
TPC 3.Fine-Scale Gain Flatness vs. Frequency, G = +1
FREQUENCY – MHz
0.1TPC 4.Frequency Response vs. Signal Level,
VS = ±12 V, G = +1
FREQUENCY – kHz
FREQUENCY RESPONSE – dB
0.1101005001TPC 5.Frequency Response vs. Capacitive
Load, CL = 0 pF, 30 pF, and 50 pF, RS = 0 W
TPC 6.Bandwidth vs. Supply, RL = 500 W, VIN = 200 mV p-p
AD8022
FREQUENCY – Hz
GAIN – dB
10k100k1M10M100M500MTPC 7.Open-Loop Gain
FREQUENCY – Hz
PHASE – Degrees
10k100k1M10M100M500MTPC 8.Open-Loop Phase
TPC 9.Noninverting Small Signal Pulse Response,
RL = 500 W, VS = ±12 V, G = +1, RF = 0
TPC 10.Noninverting Small Signal Pulse Response,
RL = 500 W, VS = ±2.5 V, G = +1, RF = 0
TPC 11.Noninverting Large Signal Pulse Response,
RL = 500 W, VS = ±12 V, G = +1, RF = 0
TPC 12.Noninverting Large Signal Pulse Response,
RL = 500 W, VS = ±2.5V, G = +1, RF = 0
TPC 13.Settling Time to 0.1%, VS = ±12 V,
Step Size = 2V p-p, G = +2, RL = 500 W
TPC 14.Settling Time to 0.1%, VS = ±2.5 V,
Step Size = 2V p-p, G = +2, RL = 500 W
SUPPLY VOLTAGE – V
SLEW RATE – V/
4.56.58.510.512.5TPC 15. Slew Rate vs. Supply Voltage, G= +2
FREQUENCY – Hz
HARMONIC DISTORTION – dB
10k100k1M1k
10MTPC 16.Distortion vs. Frequency, VS = ±12 V,
RL = 500 W, RF = 0 W, VOUT = 2 V p-p, G = +1
FREQUENCY – Hz
HARMONIC DISTORTION – dB
10k100k1M1k
10MTPC 17.Distortion vs. Frequency, VS = ±2.5 V,
RL = 500 W, RF = 0 W, VOUT = 2 V p-p, G = +1
TPC 18.Distortion vs. Output Voltage, VS = ±12 V,
AD8022TPC 19.Distortion vs. Output Voltage, VS = ±2.5V,
G = +1, f = 1 MHz, RL = 500 W, RF = 0 W
TPC 20.Multitone Power Ratio Test Circuit
FREQUENCY – kHz
10dB/DIVTPC 21.Multitone Power Ratio: VS = ±12 V,
RL = 500 W, Full Rate ADSL (DMT), Downstream
FREQUENCY – kHz
10dB/DIVTPC 22.Multitone Power Ratio: VS = ±12 V, RL = 500 W,
Full Rate ADSL (DMT), Upstream
FREQUENCY – kHz
10dB/DIVTPC 23.Multitone Power Ratio: VS = ±6 V, RL =
500 W,Full Rate ADSL (DMT), Downstream
FREQUENCY – kHz
10dB/DIVTPC 24.Multitone Power Ratio: VS = ±6 V, RL = 500 W,
Full Rate ADSL (DMT), Upstream
