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AD8017ARADN/a24000avaiDual High Output Current, High Speed Amplifier
AD8017AR-REEL |AD8017ARREELANALOGN/a1584avaiDual High Output Current, High Speed Amplifier
AD8017AR-REEL7 |AD8017ARREEL7ADIN/a995avaiDual High Output Current, High Speed Amplifier


AD8017AR ,Dual High Output Current, High Speed AmplifierSPECIFICATIONSS L F GParameter Conditions Min Typ Max UnitDYNAMIC PERFORMANCE–3 dB Bandwidth G = +2 ..
AD8017AR-REEL ,Dual High Output Current, High Speed AmplifierAPPLICATIONS8xDSL PCI CardsConsumer DSL Modems6Line DriverVideo Distribution4V = 2.5VS2PRODUCT DES ..
AD8017AR-REEL7 ,Dual High Output Current, High Speed AmplifierSPECIFICATIONSS L F GParameter Conditions Min Typ Max UnitDYNAMIC PERFORMANCE–3 dB Bandwidth G = +2 ..
AD8017ARZ ,Low Cost, High Output Current, High Output Voltage Line DriverSPECIFICATIONSS L F GParameter Conditions Min Typ Max UnitDYNAMIC PERFORMANCE–3 dB Bandwidth G = +2 ..
AD8017ARZ ,Low Cost, High Output Current, High Output Voltage Line DriverSPECIFICATIONSS L F GParameter Conditions Min Typ Max UnitDYNAMIC PERFORMANCE–3 dB Bandwidth G = +2 ..
AD8017ARZ-REEL ,Low Cost, High Output Current, High Output Voltage Line Driverapplications.Figure 1. Output Swing vs. Load ResistanceFabricated in ADI’s high speed XFCB process, ..
ADM706RAR ,+3 V, Voltage Monitoring uP Supervisory Circuits+3 V, Voltage MonitoringamP Supervisory CircuitsADM706P/R/S/T, ADM708R/S/TFUNCTIONAL BLOCK DIAGRAMS
ADM706RAR-REEL , 3 V, Voltage Monitoring Microprocessor Supervisory Circuits
ADM706SAN ,+3 V, Voltage Monitoring uP Supervisory CircuitsGENERAL DESCRIPTIONPOWER FAILThe ADM706P/R/S/T and the ADM708R/S/T microprocessor INPUT (PFI) POWER ..
ADM706SAR ,+3 V, Voltage Monitoring uP Supervisory CircuitsGENERAL DESCRIPTIONPOWER FAILThe ADM706P/R/S/T and the ADM708R/S/T microprocessor INPUT (PFI) POWER ..
ADM706SAR-REEL , 3 V, Voltage Monitoring Microprocessor Supervisory Circuits
ADM706T ,+3 V, Voltage Monitoring uP Supervisory CircuitsAPPLICATIONSMicroprocessor SystemsComputersVCCControllersRESETIntelligent Instruments 70mACritical ..


AD8017AR-AD8017AR-REEL-AD8017AR-REEL7
Dual High Output Current, High Speed Amplifier
REV.A
Dual High Output Current,
High Speed Amplifier
PIN CONFIGURATION
8-Lead Thermal Coastline SOIC (SO-8)
FEATURES
High Output Drive Capability
20 V p-p Differential Output Voltage, RL = 50 �
10 V p-p Single-Ended Output Voltage While
Delivering 200 mA to a 25 � Load
Low Power Operation
+5 V to +12 V Voltage Supply @ 7 mA/Amplifier
Low Distortion
–78 dBc @ 500 kHz SFDR, RL = 100 �, VO = 2 V p-p
–58 dBc Highest Harmonic @ 1 MHz, IO = 270 mA
(RL = 10 �)
High Speed
160 MHz, –3 dB Bandwidth (G = +2)
1600 V/�s Slew Rate
APPLICATIONS
xDSL PCI Cards
Consumer DSL Modems
Line Driver
Video Distribution
PRODUCT DESCRIPTION

The AD8017 is a low cost, dual high speed amplifier capable of
driving low distortion signals to within 1.0 V of the supply rail.
It is intended for use in single supply xDSL systems where low
distortion and low cost are essential. The amplifiers will be able
to drive a minimum of 200 mA of output current per amplifier.
The AD8017 will deliver –78 dBc of SFDR at 500 kHz, required
for many xDSL applications.
Fabricated in ADI’s high speed XFCB process, the high band-
width and fast slew rate of the AD8017 keep distortion to a
minimum, while dissipating a minimum amount of power. The
quiescent current of the AD8017 is 7 mA/amplifier.
Low distortion, high output voltage drive, and high output
current drive make the AD8017 ideal for use in low cost Cus-
tomer Premise End (CPE) equipment for ADSL, SDSL, VDSL
and proprietary xDSL systems.
Figure 1.Output Swing vs. Load Resistance
The AD8017 drive capability comes in a very compact form.
Utilizing ADI’s proprietary Thermal Coastline SOIC package,
the AD8017’s total (static and dynamic) power on +12 V sup-
plies is easily dissipated without external heatsink, other than to
place the AD8017 on a 4-layer PCB.
The AD8017 will operate over the commercial temperature
range –40°C to +85°C.
Figure 2.Differential Drive Circuit for xDSL Applications
AD8017–SPECIFICATIONS
NOTESOutput current is defined here as the highest current load delivered by the output of each amplifier into a specified resistive load (RL = 10 Ω), while maintaining an
acceptable distortion level (i.e., less than –60 dBc highest harmonic) at a given frequency (f = 1 MHz).
Specifications subject to change without notice.
(@ +25�C, VS = �6 V, RL = 100 �, RF = RG = 619 �, unless otherwise noted)
AD8017SPECIFICATIONS(@ +25�C, VS = �2.5 V, RL = 100 �, RF = RG = 619 �, unless otherwise noted)
POWER SUPPLY
NOTESOutput current is defined here as the highest current load delivered by the output of each amplifier into a specified resistive load (RL = 10 Ω), while maintaining an
acceptable distortion level (i.e., less than –60 dBc highest harmonic) at a given frequency (f = 1 MHz).
Specifications subject to change without notice.
AD8017
ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V
Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±2.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . –65°C to +125°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.Specification is for device on a two-layer board with 2500 mm2 of 2 oz. copper at
+25°C 8-lead SOIC package: θJA = 95.0°C/W.
MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8017
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
device is determined by the glass transition temperature of the
plastic, approximately +150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a junc-
tion temperature of +175°C for an extended period can result in
device failure.
CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8017 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
The output stage of the AD8017 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8017 to source or sink 500 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.
AMBIENT TEMPERATURE – �C
MAXIMUM POWER DISSIPATION
Watts304050607080
0.5

Figure 3.Plot of Maximum Power Dissipation vs.
Temperature for AD8017
ORDERING GUIDE
Figure 4.Test Circuit: Gain = +2
200ns/DIV
25mV/DIV

Figure 5.100 mV Step Response; G = +2, VS = ±2.5 V or
±6 V, RL = 100 Ω
200ns/DIV
1V/DIV

Figure 6.4 V Step Response; G = +2, VS = ±6 V,
RL = 100 Ω
Figure 7.Test Circuit: Gain = –1
Figure 8.100 mV Step Response; G = –1, VS = ±2.5 V or
±6 V, RL = 100 Ω
Figure 9.4 V Step Response; G = –1, VS = ±6 V,
RL = 100 Ω
AD8017
FREQUENCY – MHz
DISTORTION
dBc
–100

Figure 10.Distortion vs. Frequency; VS = ±6 V, RL = 100 Ω
FREQUENCY – MHz
DISTORTION
dBc
–100

Figure 11.Distortion vs. Frequency; VS = ±6 V, RL = 25 Ω
Figure 12.Distortion vs. Output Current; VS = ±6 V,
f = 1 MHz, G = +2
FREQUENCY – MHz
DISTORTION
dBc
–100

Figure 13.Distortion vs. Frequency; VS = ±2.5 V, RL = 100 Ω
FREQUENCY – MHz
DISTORTION
dBc
–10

Figure 14.Distortion vs. Frequency; VS = ±2.5 V, RL = 25 Ω
Figure 15.Distortion vs. Output Current; VS = ±2.5 V,
f = 1 MHz, G = +2
Figure 16.Distortion vs. RL, VS = ±6 V, G = +2, VOUT = 2 V p-p,
f = 1 MHz
Figure 17.Distortion vs. Output Voltage, VS = ±6 V, G = +2,
f = 1 MHz
Figure 18.Distortion vs. Output Voltage, VS = ±6 V, G = +2,
f = 10 MHz
LOAD RESISTANCE – �
DISTORTION
dBc
–120

Figure 19.Distortion vs. RL, VS = ±2.5 V, G = +2,
VOUT = 2 V p-p, f = 1 MHz
Figure 20.Distortion vs. Output Voltage, VS = ±2.5 V,
G = +2, f = 1 MHz
OUTPUT VOLTAGE – Volts
HIGHEST HARMONIC DISTORTION
dBc1.5
–80

Figure 21.Distortion vs. Output Voltage, VS = ±2.5 V,
G = +2, f = 10 MHz
AD8017
Figure 22.Frequency Response; VS = ±6 V
FREQUENCY – MHz
0.1dB FLATNESS
dB100
–0.2

Figure 23.Gain Flatness; VS = ±6 V
Figure 24.Output Voltage vs. Frequency; VS = ±6 V
Figure 25.Frequency Response; VS = ±2.5 V
Figure 26.Gain Flatness; VS = ±2.5 V
Figure 27.Output Voltage vs. Frequency; VS = ±2.5 V
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