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AD8010AN-AD8010AR-16-REEL7
200 mA Output Current High Speed Amplifier
REV.A
200 mA Output Current
High Speed Amplifier
CONNECTION DIAGRAMS
8-Lead DIP and SOIC
NC = NO CONNECT
–IN
+IN
+VS
OUT–VS
16-Lead Wide Body SOICFigure 1.Video Distribution Amplifier
PRODUCT DESCRIPTIONThe AD8010 is a low power, high current amplifier capable of
delivering a minimum load drive of 175 mA. Signal performance
such as 0.02% and 0.03° differential gain and phase error is
maintained while driving eight 75 W back terminated video lines.
The current feedback amplifier features gain flatness to 60 MHz
and –3 dB (G = +1) signal bandwidth of 230 MHz and only
requires a typical of 15.5 mA supply current from –5 V supplies.
These features make the AD8010 an ideal component for Video
Distribution Amplifiers or as the drive amplifier within high data
rate Digital Subscriber Line (VDSL and xDSL) systems.
The AD8010 is an ideal component choice for any application
that needs a driver that will maintain signal quality when driving
low impedance loads.
The AD8010 is offered in three package options: an 8-lead DIP,
16-lead wide body SOIC and a low thermal resistance 8-lead
SOIC, and operates over the industrial temperature range of
–40°C to +85°C.
FEATURES
200 mA of Output Current
9 V Load
SFDR –54 dBc @ 1 MHz
Differential Gain Error 0.04%, f = 4.43 MHz
Differential Phase Error 0.068, f = 4.43 MHz
Maintains Video Specifications Driving Eight Parallel
75 V Loads
0.02% Differential Gain
0.038 Differential Phase
0.1 dB Gain Flatness to 60 MHz
THD –72 dBc @ 1 MHz, RL = 18.75 V
IP3 42 dBm @ 5 MHz, RL = 18.75 V
1 dB Gain Compression 21 dBm @ 5 MHz, RL = 100 V
230 MHz –3 dB Bandwidth, G = +1, RL = 18.75 V
800 V/ms Slew Rate, RL = 18.75 V
25 ns Settling Time to 0.1%
Available in 8-Lead DIP, 16-Lead Wide Body SOIC and
Thermally Enhanced 8-Lead SOIC
APPLICATIONS
Video Distribution Amplifier
VDSL, xDSL Line Driver
Communications
ATE
Instrumentation
AD8010–SPECIFICATIONS(@ +258C, VS = 65 V, G = +2, RL = 18.75 V, RS+ = 150 V, RF = RG = 604 V (R-16),
RF = RG = 562 V (N-8), RF = RG = 499 V (R-8). TMIN = –408C, TMAX = +858C unless otherwise noted)
AD8010
ABSOLUTE MAXIMUM RATINGS1Supply␣Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6␣V
Internal␣Power␣Dissipation2
Plastic␣Package (N) . . . . . . .Observe Power Derating Curves
Small␣Outline␣Package (R) . .Observe Power Derating Curves
Wide Body SOIC (R-16) . . . .Observe Power Derating Curves
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . .–VS
Differential␣Input␣Voltage . . . . . . . . . . . . . . . . . . . . . .–1.2␣V
Output Short Circuit Duration. . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . .–65°C to +125°C
Operating Temperature Range (A Grade) . . .–40°C to +85°C
Lead Temperature Range (Soldering␣10␣sec) . . . . . . . .+300°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Lead Plastic Package: qJA = 90°C/Watt
8-Lead SOIC Package: qJA = 122°C/Watt
16-Lead SOIC Package: qJA = 73°C/Watt
AMBIENT TEMPERATURE – 8C
MAXIMUM POWER DISSIPATION – Watts
–40–30–20–100102030405060708090Figure 2.Plot of Maximum Power Dissipation vs. Temperature
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
ORDERING GUIDE
MAXIMUM POWER DISSIPATIONThe maximum power that can be safely dissipated by the
AD8010 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150°C. Temporarily
exceeding this limit may cause a shift in parametric perfor-
mance due to a change in the stresses exerted on the die by the
package. Exceeding a junction temperature of +175°C for an
extended period can result in device failure.
While the AD8010 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
AD8010Figure 3.Distribution of Differential Gain (dG) and
Differential Phase (df); RL = 18.75 W
FREQUENCY – MHz
HARMONIC DISTORTION – dBc Figure 4.Harmonic Distortion vs. Frequency; G = +2
Figure 5.Gain Flatness vs. Frequency Over Temperature
(–40°C to +85°C)
Figure 6.Differential Gain and Phase vs. Number of Video
Loads Over Temperature (–40°C to +85°C); f = 4.43 MHz
Figure 7.Two-Tone, 3rd Order IMD Intercept vs.
Frequency; G = +2, RL = 18.75 W
Figure 8.Gain Flatness vs. Frequency vs. Number of
Video Loads
–Typical Performance Characteristics
FREQUENCY – MHz
INTERMODULATION DISTORTION – dBm
–85Figure 9.Intermodulation Distortion
POUT – dBm
TOTAL HARMONIC DISTORTION – dBc–4–20246810
–65Figure 10.Total Harmonic Distortion vs. POUT; G = +2
FREQUENCY – MHz
NORMALIZED GAIN – dB100 Figure 11.Small Signal Closed-Loop Frequency
Response; RL = 18.75 W
FREQUENCY – MHz
MEASURE
– dBm
–20Figure 12. Multitone Distortion; RL = 100 W
Figure 13.Harmonic Distortion vs. Load
Figure 14.Closed-Loop Frequency Response vs.
Number of Video Loads
AD8010
FREQUENCY – MHz
PSRR – dB10100
–70Figure 15.PSRR vs. Frequency
FREQUENCY – MHz
CLOSED-LOOP OUTPUT RESISTANCE – 100
0.031Figure 16.Closed-Loop Output Resistance vs. Frequency
FREQUENCY – MHz
NORMALIZED GAIN – dB100Figure 17.Large Signal Frequency Response; VO = 2 V p-p
FREQUENCY – MHz
CMRR – dB100
–90Figure 18.CMRR vs. Frequency
Figure 19.Transresistance and Phase vs. Frequency;
RL = 18.75 W
FREQUENCY – MHz
NORMALIZED GAIN – dB100
–6.0Figure 20.Large Signal Frequency Response; VO = 4 V p-p
