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AD779JDADN/a8avai14-Bit 128 kSPS Complete Sampling ADC
AD779JNADN/a5avai14-Bit 128 kSPS Complete Sampling ADC
AD779KDADN/a100avai14-Bit 128 kSPS Complete Sampling ADC
AD779KNADN/a6avai14-Bit 128 kSPS Complete Sampling ADC
AD779SDADN/a7avai14-Bit 128 kSPS Complete Sampling ADC


AD779KD ,14-Bit 128 kSPS Complete Sampling ADCapplications.full linear bandwidth of 500 kHz. High input impedance (10 MΩ)allows direct connection ..
AD779KN ,14-Bit 128 kSPS Complete Sampling ADCSPECIFICATIONSf = 10.009 kHz unless otherwise noted)lNAD779J/A/S AD779K/B/T Parameter Min Typ Max M ..
AD779SD ,14-Bit 128 kSPS Complete Sampling ADCSPECIFICATIONS MIN MAX CC EE DDParameter Test Conditions Min Max UnitsLOGIC INPUTSV High Level Inpu ..
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ADM1818-20ART-REEL ,Microprocessor Reset CircuitsGENERAL DESCRIPTIONThe ADM181x range of voltage monitoring circuits can be usedADM1813/ADM1818in an ..
ADM1818-20ART-RL7 ,Microprocessor Reset CircuitsFEATURES FUNCTIONAL BLOCK DIAGRAMSReliable Low Cost Voltage Monitor with Reset OutputSupports Monit ..
ADM1818-5ART-REEL7 , Microprocessor Reset Circuits
ADM1818-5ART-REEL7 , Microprocessor Reset Circuits
ADM1818-5ART-REEL7 , Microprocessor Reset Circuits
ADM1818-R22ART-RL7 , Microprocessor Reset Circuits


AD779JD-AD779JN-AD779KD-AD779KN-AD779SD
14-Bit 128 kSPS Complete Sampling ADC
FUNCTIONAL BLOCK DIAGRAM
REV.B14-Bit 128 kSPS
Complete Sampling ADC
FEATURES
AC and DC Characterized and Specified (K, B, T
Grades)
128k Conversions per Second
1 MHz Full Power Bandwidth
500 kHz Full Linear Bandwidth
80 dB S/N+D (K, B, T Grades)
Twos Complement Data Format (Bipolar Mode)
Straight Binary Data Format (Unipolar Mode)
10 MV Input Impedance
16-Bit Bus Interface (See AD679 for 8-Bit Interface)
Onboard Reference and Clock
10 V Unipolar or Bipolar Input Range
MIL-STD-883 Compliant Versions Available
PRODUCT DESCRIPTION

The AD779 is a complete, multipurpose 14-bit monolithic
analog-to-digital converter, consisting of a sample-hold amplifier
(SHA), a microprocessor compatible bus interface, a voltage
reference and clock generation circuitry.
The AD779 is specified for ac (or “dynamic”) parameters such
as S/N+D ratio, THD and IMD which are important in signal
processing applications. In addition, the AD779K, B and T
grades are fully specified for dc parameters which are important
in measurement applications.
The 14 data bits are accessed by a 16-bit bus in a single read
operation. Data format is straight binary for unipolar mode and
twos complement binary for bipolar mode. The input has a full-
scale range of 10 V with a full power bandwidth of 1 MHz and a
full linear bandwidth of 500 kHz. High input impedance (10 MΩ)
allows direct connection to unbuffered sources without signal
degradation.
This product is fabricated on Analog Devices’ BiMOS process,
combining low power CMOS logic with high precision, low
noise bipolar circuits; laser-trimmed thin-film resistors provide
high accuracy. The converter utilizes a recursive subranging
algorithm which includes error correction and flash converter
circuitry to achieve high speed and resolution.
The AD779 operates from +5 V and ±12 V supplies and
dissipates 560 mW (typ). Twenty-eight-pin plastic DIP and
ceramic DIP packages are available.
*. Patent Numbers 4,804,960; 4,814,767; 4,833,345;
4,250,445; 4,808,908; RE30,586.
PRODUCT HIGHLIGHTS
COMPLETE INTEGRATION: The AD779 minimizes
external component requirements by combining a high speed
sample-hold amplifier (SHA), ADC, 5 V reference, clock
and digital interface on a single chip. This provides a fully
specified sampling A/D function unattainable with discrete
designs.SPECIFICATIONS: The AD779K, B and T grades provide
fully specified and tested ac and dc parameters. The AD779J,
A and S grades are specified and tested for ac parameters; dc
accuracy specifications are shown as typicals. DC specifica-
tions (such as INL, gain and offset) are important in control
and measurement applications. AC specifications (such as
S/N+D ratio, THD and IMD) are of value in signal process-
ing applications.EASE OF USE: The pinout is designed for easy board lay-
out, and the single cycle read output provides compatibility
with 16-bit buses. Factory trimming eliminates the need for
calibration modes or external trimming to achieve rated
performance.RELIABILITY: The AD779 utilizes Analog Devices’
monolithic BiMOS technology. This ensures long term
reliability compared to multichip and hybrid designs.The AD779 is available in versions compliant with MIL-
STD-883. Refer to the Analog Devices Military Products
Databook or current AD779/883B data sheet for detailed
specifications.
AD779–SPECIFICATIONS
AC SPECIFICATIONS

TOTAL HARMONIC DISTORTION (THD)
DIGITAL SPECIFICATIONS

LOGIC OUTPUTS
NOTESfIN amplitude = –0.5 dB (9.44 V p-p) bipolar mode full scale unless otherwise indicated. All measurements referred to a –0 dB (9.997 V p-p) input signal
unless otherwise noted.fA = 9.08 kHz, fB = 9.58 kHz, with fSAMPLE = 128 kSPS.
Specifications subject to change without notice.
(TMIN to TMAX, VCC = +12 V 6 5%, VEE = –12 V 6 5%, VDD = +5 V 6 10%, fSAMPLE = 128 kSPS,
flN = 10.009 kHz unless otherwise noted)1
(All device types TMIN to TMAX, VCC = +12 V 6 5%, VEE = –12 V 6 5%, VDD = +5 V 6 10%)
DC SPECIFICATIONS
NOTESAdjustable to zero. See Figures 5 and 6.Includes internal voltage reference error.
AD779
(TMIN to TMAX, VCC = +12 V 6 5%, VEE = –12 V 6 5%, VDD = +5 V 6 10% unless otherwise noted)
AD779
TIMING SPECIFICATIONS
(All device types TMIN to TMAX, VCC = +12 V 6 5%, VEE = –12 V

6 5%, VDD = +5 V 6 10%)
Aperture Delay
Conversion Time
Status Delay
Access Time
Float Delay
Output Delay
Read Pulse Width
NOTESIncludes Acquisition Time.Measured from the falling edge of OE/EOCEN (0.8 V) to the time at which the
data lines/EOC cross 2.0 V or 0.8 V. See Figure 4.COUT = 100 pF.COUT = 50 pF.Measured from the rising edge of OE/EOCEN (2.0 V) to the time at which the
output voltage changes by 0.5 V. See Figure 4; COUT = 10 pF.
Specifications subject to change without notice.
Figure 1.Conversion Timing
Figure 3.EOC Timing
Figure 4.Load Circuit for Bus Timing Specifications
ESD SENSITIVITY
The AD779 features input protection circuitry consisting of large “distributed” diodes and
polysilicon series resistors to dissipate both high energy discharges (Human Body Model) and fast,
low energy pulses (Charged Device Model). Per Method 3015.2 of MIL-STD-883C, the AD779
has been classified as a Category 1 device.
Proper ESD precautions are strongly recommended to avoid functional damage or performance
degradation. Charges as high as 4000 volts readily accumulate on the human body and test
equipment and discharge without detection. Unused devices must be stored in conductive foam or
shunts, and the foam should be discharged to the destination socket before devices are removed. For
further information on ESD precautions, refer to Analog Devices’ ESD Prevention Manual.
ABSOLUTE MAXIMUM RATINGS1

NOTESStresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.The AD779 is not designed to operate from ±15 V supplies.
ORDERING GUIDE1

AD779KN
AD779JD
AD779KD
AD779AD
AD779BD
AD779SD
NOTESFor two cycle read (8+16 bits) interface to 8-bit buses, see AD679.For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military Products Databook or current
AD779
PIN DESCRIPTION

REFOUT
VEE
Type:AI = Analog Input.
AO = Analog Output.
DI = Digital Input.
DO = Digital Output. All DO pins are three-state drivers.
P = Power.
PIN CONFIGURATION
DIP Package
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