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AD745ADN/a10avaiUltralow Noise, High Speed, BiFET Op Amp


AD745 ,Ultralow Noise, High Speed, BiFET Op Ampapplications demanding low noise andSonarhigh dc precision. Furthermore, the AD745 does not exhibit ..
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AD745
Ultralow Noise, High Speed, BiFET Op Amp
REV.D
Ultralow Noise,
High Speed, BiFET Op Amp
CONNECTION DIAGRAMFEATURES
ULTRALOW NOISE PERFORMANCE
2.9 nV/�Hz at 10 kHz
0.38 �V p-p, 0.1 Hz to 10 Hz
6.9 fA/�Hz Current Noise at 1 kHz
EXCELLENT AC PERFORMANCE
12.5 V/�s Slew Rate
20 MHz Gain Bandwidth Product
THD = 0.0002% @ 1 kHz
Internally Compensated for Gains of +5 (or –4) or
Greater
EXCELLENT DC PERFORMANCE
0.5 mV Max Offset Voltage
250 pA Max Input Bias Current
2000 V/mV Min Open Loop Gain
Available in Tape and Reel in Accordance with
EIA-481A Standard
APPLICATIONS
Sonar
Photodiode and IR Detector Amplifiers
Accelerometers
Low Noise Preamplifiers
High Performance Audio
PRODUCT DESCRIPTION

The AD745 is an ultralow noise, high-speed, FET input opera-
tional amplifier. It offers both the ultralow voltage noise and
high speed generally associated with bipolar input op amps and
the very low input currents of FET input devices. Its 20 MHz
bandwidth and 12.5 V/µs slew rate makes the AD745 an ideal
Figure 1.
amplifier for high-speed applications demanding low noise and
high dc precision. Furthermore, the AD745 does not exhibit an
output phase reversal.
The AD745 also has excellent dc performance with 250 pA
maximum input bias current and 0.5 mV maximum offset voltage.
The internal compensation of the AD745 is optimized for higher
gains, providing a much higher bandwidth and a faster slew
rate. This makes the AD745 especially useful as a preamplifier
where low level signals require an amplifier that provides both
high amplification and wide bandwidth at these higher gains.
The AD745 is available in two performance grades. The AD745J
and AD745K are rated over the commercial temperature range
of 0°C to 70°C, and are available in the 16-lead SOIC package.
Figure 2.
16-Lead SOIC (R) Package
AD745–SPECIFICATIONS
(@ +25�C and �15 V dc, unless otherwise noted.)

NOTESInput offset voltage specifications are guaranteed after five minutes of operations at TA = 25°C.Test conditions: +VS = 15 V, –VS = 12 V to 18 V and +VS = 12 V to +18 V, –VS = 15 V.Bias current specifications are guaranteed maximum at either input after five minutes of operation at TA = 25°C. For higher temperature, the current doubles every 10°C.Gain = –4, RL = 2 kΩ, CL = 10 pF.Defined as voltage between inputs, such that neither exceeds ±10 V from common.
AD745 ELECTRICAL CHARACTERISTICS
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD745 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
R = Small Outline IC.
ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Internal Power Dissipation2
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±VS
Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Differential Input Voltage . . . . . . . . . . . . . . . . . . +VS and –VS
Storage Temperature Range (R) . . . . . . . . . –65°C to +125°C
Operating Temperature Range
AD745J/K . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . .300°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.16-Pin Plastic SOIC Package: θJA = 100°C/W, θJC = 30°C/W
ESD SUSCEPTIBILITY

An ESD classification per method 3015.6 of MIL-STD-883C
has been performed on the AD745, which is a class 1 device.
Using an IMCS 5000 automated ESD tester, the two null pins
will pass at voltages up to 1,000 volts, while all other pins will
pass at voltages exceeding 2,500 volts.
AD745
–Typical Performance Characteristics(@ + 25�C, VS = �15 V, unless otherwise noted.)

TPC 1.Input Voltage Swing vs.
Supply Voltage
TPC 4.Quiescent Current vs.
Supply Voltage
TPC 7.Input Bias Current vs.
Common-Mode Voltage
TPC 3.Output Voltage Swing vs.
Load Resistance
TPC 6.Output Impedance vs.
Frequency
TPC 9.Gain Bandwidth Product vs.
Temperature
TPC 2.Output Voltage Swing vs.
Supply Voltage
TPC 5.Input Bias Current vs.
Temperature
TPC 8.Short Circuit Current Limit vs.
Temperature
TPC 10.Open-Loop Gain and Phase
vs. Frequency
TPC 13.Common-Mode Rejection vs.
Frequency
TPC 16.Total Harmonic Distortion
vs. Frequency
TPC 11.Slew Rate vs. Temperature
TPC 14. Power Supply Rejection
vs. Frequency
TPC 17.Input Noise Voltage
Spectral Density
TPC 12.Open-Loop Gain vs.
Supply Voltage
TPC 15.Large Signal Frequency
Response
TPC 18.Input Noise Current
Spectral Density
AD745
TPC 19.Distribution of Offset
Voltage Drift. TA = 25°C to 125°C
TPC 22a.Gain of 5 Follower,
16-Lead Package Pinout
TPC 23a.Gain of 4 Inverter,
16-Lead Package Pinout
TPC 20.Typical Input Noise Voltage
Distribution @ 10 kHz
TPC 22b. Gain of 5 Follower
Large Signal Pulse Response
TPC 23b.Gain of 4 Inverter Large
Signal Pulse Response
TPC 21.Offset Null Configuration,
16-Lead Package Pinout
TPC 22c. Gain of 5 Follower Small
Signal Pulse Response
TPC 23c.Gain of 4 Inverter Small
Signal Pulse Response
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