A1015 ,PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER/ DRIVER STAGE AMPLIFIER)APPLICATIONS5.1 MAX.High Voltage and High Current..qp-rf%MAX.11VCEO = -OUV uvun.), 10 = - LoumA (ma ..
A1020 , Silicon PNP Epitaxial Transistor
A1020 , Silicon PNP Epitaxial Transistor
A1020B-1PL84C , ACT 1 Series FPGAs
A1020B-1PL84C , ACT 1 Series FPGAs
A1020B-PL68C , HiRel FPGAs
AC373 , OCTAL D-TYPE TRANSPARENT LATCHES WITH 3-STATE OUTPUTS
AC574 , OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS WITH 3-STATE OUTPUTS
AC574 , OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS WITH 3-STATE OUTPUTS
AC574 , OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS WITH 3-STATE OUTPUTS
AC82G41-SLGQ3 , Intel® 4 Series Chipset Family
AC82GL40 , Mobile Intel® GM45, GS45, and GL40 Express Chipsets for Embedded Computing
A1015
PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER/ DRIVER STAGE AMPLIFIER)
TOSHIBA 2SA1015
TOSHIBATRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SAll 0115
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS Unit in mm
DRIVER STAGE AMPLIFIER APPLICATIONS
5.1 MAX.
0 High Voltage and High Current. é
VCE0= -50V (Min.), IC-- -150mA (Max.) 3.
q Excellent hFE Linearity trtl5 H H :21 .
hFE (2) =80 (Typ.) at VCE = -6V, IC = - 150mA 0.55 MAX. l co. g
hFE (IC = - 0.1mA) / hFE (IC = - 2mA) = 0.95 (Typ.) th45 I E
q Low Noise : NF=1dB (Typ.) at f=1kHz ] [
0 Complementary to 2SC1815. 1.27 1.27
MAXIMUM RATINGS (Ta = 25°C) ' / . .
CHARACTERISTIC SYMBOL RATING UNIT 1 , I' E
Collector-Base Voltage VCBO -50 V -
Collector-Er/ter Voltage VCEO -50 V 1 EMITTER
Emitter-Base Voltage VEBO -5 V 2. COLLECTOR
Collector Current IC - 150 mA 3. BASE
Base Current 1B -50 mA JEDEC TO-92
Collector Power Dissipation PC 400 mW EIAJ SC-43
J unction Temperature Ti 125 T TOSHIB A 2-5F1B
Storage Temperature Range Tstg -55--125 ''C Weight ' 0.21g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 50V, IE = 0 - - -0.1 PA
Emitter Cut-off Current IEBO VEB = - 5V, IC = 0 - - -0.1 pzA
h N t V = -6V, I = -2rnA 7O - 400
DC Current Gain FE (1) ( 0 e) CE C
hFE (2) VCE = - 6V, IC = - 150mA 25 80 -
Collector-Er/ter V I - 100mA I - 10mA 0 1 0 3 V
Saturation Voltage CE (sat) C - - , B-- - - - . - .
Base-Emitter - -
Saturation Voltage VBE (sat) IC - - lOOmA, 1B - - lOmA - - - LI V
Transition Frequency fT VCE = - 10V, IC = - 1mA 80 - - MHz
Collector Out ut Ca acitance C VCB = - lov, IE=0, - 4 7 F
p p ob f= 1MHz p
. . . , VCE = - 10V, IE = 1mA,
Base Intrinsic Resistance rbb f= 30MHz - 30 - n
. . VCE = -6V, IC = -0.1mA,
Noise Figure NF RG= 10kn, f-- lkHz - 1 0 10 dB
Note : hFE(1) Classification 0 .' 70--140, Y .' 120-240, GR : 200-400
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-04-10 1/2
TOSHIBA
2SA1015
1C - VCE
i COMMON EMITTER
sD-200 -1.5 Ta=25°C
E .-160
E -120
o _1 _2 -3 _4 -5 -f9 -'7 _8
C0LLECT0R-EMITTER VOLTAGE VCE (V)
hFE - IC
g COMMON - VCE = -6V
EMITTER - - - - VCE = - IV
E Ta=100°C
D -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT IC (mA)
VCE (sat) - IC
i? -0 COMMON EMITTER
:3 Ic/IB=10
'dfi-0 Ta=100°C
a: -0 25
UQ -25
faoi'i,
gg -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT IC (mA)
5 VBE(sat) - IC
EB _ COMMON EMITTER
gt Ic/IB=10
tcl Ta=25°C
le' -1
's-iii, 0.5
. -0.3
ttl -0.1
-0.1-0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT 10 (mA)
BASE CURRENT I}; (#10
TRANSITION FREQUENCY fT
COLLECTOR POWER DISSIPATION PC (W)
Mm - IC
COMMON EMITTER
VCE = - 6V
-30 Ta=100°C 25
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE VBE (V)
fT - IC
COMMON EMITTER
VCE-- - 10v
Ta=25°C
-0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT 10 (mA)
25 50 75 100 125
AMBIENT TEMPERATURE Ta (°C)
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third games which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C
O The information contained herein is subject to change without notice.
RPORATION or others.
1997-04-10 2/2
www.ic-phoenix.com
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