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74LVC2G126DC-74LVC2G126DP-74LVC2G126GT
Dual bus buffer/line driver; 3-state
1. General description
The 74LVC2G126 is a dual non-inverting buffer/line driver with 3-state outputs. Each
3-state output is controlled by an output enable input (pin nOE). A LOW-level at pin nOE
causes the output to assume a high-impedance OFF-state. Schmitt trigger action at all
inputs makes the circuit highly tolerant of slower input rise and fall times.
Inputs can be driven from either 3.3Vor5 V devices. This feature allows the use of the
74LVC2G126 as a translator in a mixed 3.3V and5 V environment.
It is fully specified for partial power-down applications using IOFF. The IOFF circuitry
disables the output, preventing a damaging backflow current through the device when it is
powered down.
2. Features and benefits
Wide supply voltage range from 1.65Vto 5.5V5 V tolerant input/output for interfacing with 5 V logic High noise immunity Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95 V) JESD8-5 (2.3 V to 2.7 V) JESD8-B/JESD36 (2.7 V to 3.6 V) ESD protection: HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V 24 mA output drive (VCC =3.0V) CMOS low power consumption Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltages up to 5V Multiple package options Specified from 40 Cto+85 C and 40 Cto +125 C
74L VC2G126
Dual bus buffer/line driver; 3-state
Rev. 12 — 8 April 2013 Product data sheet
NXP Semiconductors 74LVC2G126
Dual bus buffer/line driver; 3-state
3. Ordering information

4. Marking

[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
Table 1. Ordering information

74LVC2G126DP 40 Cto +125C TSSOP8 plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
74LVC2G126DC 40 Cto +125C VSSOP8 plastic very thin shrink small outline package; 8 leads;
body width 2.3 mm
SOT765-1
74LVC2G126GT 40 Cto +125C XSON8 plastic extremely thin small outline package; no leads;
8 terminals; body 1  1.95  0.5 mm
SOT833-1
74LVC2G126GF 40 C to +125 C XSON8 extremely thin small outline package; no leads; terminals; body 1.351 0.5 mm
SOT1089
74LVC2G126GD 40 Cto +125C XSON8 plastic extremely thin small outline package; no leads; terminals; body 3  2  0.5 mm
SOT996-2
74LVC2G126GM 40 C to +125C XQFN8 plastic, extremely thin quad flat package; no leads; terminals; body 1.6 1.6 0.5 mm
SOT902-2
74LVC2G126GN 40 C to +125C XSON8 extremely thin small outline package; no leads; terminals; body 1.21.0 0.35 mm
SOT1116
74LVC2G126GS 40 C to +125C XSON8 extremely thin small outline package; no leads; terminals; body 1.35 1.0 0.35 mm
SOT1203
Table 2. Marking codes

74LVC2G126DP V26
74LVC2G126DC V26
74LVC2G126GT V26
74LVC2G126GF VN
74LVC2G126GD V26
74LVC2G126GM V26
74LVC2G126GN VN
74LVC2G126GS VN
NXP Semiconductors 74LVC2G126
Dual bus buffer/line driver; 3-state
5. Functional diagram

6. Pinning information
6.1 Pinning

NXP Semiconductors 74LVC2G126
Dual bus buffer/line driver; 3-state

6.2 Pin description

7. Functional description

[1] H= HIGH voltage level; L= LOW voltage level; X= don’t care; Z= high-impedance OFF-state.
Table 3. Pin description

1OE, 2OE 1, 7 7, 1 output enable input (active HIGH)
1A, 2A 2, 5 6, 3 data input, 2Y 6, 3 2, 5 data output
GND 4 4 ground (0V)
VCC 8 8 supply voltage
Table 4. Function table[1]
L
HHH Z
NXP Semiconductors 74LVC2G126
Dual bus buffer/line driver; 3-state
8. Limiting values

[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
[3] For TSSOP8 packages: above 55 C the value of Ptot derates linearly at 2.5 mW/K.
For VSSOP8 packages: above 110 C the value of Ptot derates linearly at 8.0 mW/K.
For XSON8 and XQFN8 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
9. Recommended operating conditions

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 0.5 +6.5 V
IIK input clamping current VI < 0 V 50 - mA input voltage [1] 0.5 +6.5 V
IOK output clamping current VO > VCC or VO < 0 V - 50 mA output voltage Active mode [1] 0.5 VCC + 0.5 V
Power-down mode [1][2] 0.5 +6.5 V output current VO = 0 V to VCC - 50 mA
ICC supply current - +100 mA
IGND ground current 100 - mA
Ptot total power dissipation Tamb = 40 C to +125C [3]- 300 mW
Tstg storage temperature 65 +150 C
Table 6. Operating conditions

VCC supply voltage 1.65 5.5 V input voltage 0 5.5 V output voltage Active mode 0 VCC V
VCC = 0 V; Power-down mode 0 5.5 V
Tamb ambient temperature 40 +125 C
t/V input transition rise and fall rate VCC = 1.65 V to 2.7 V - 20 ns/V
VCC = 2.7 V to 5.5 V - 10 ns/V
NXP Semiconductors 74LVC2G126
Dual bus buffer/line driver; 3-state
10. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0V).
Tamb=
40 Cto+85C
VIH HIGH-level input voltage VCC= 1.65Vto 1.95V 0.65  VCC -- V
VCC= 2.3Vto 2.7V 1.7 - - V
VCC= 2.7Vto 3.6V 2.0 - - V
VCC= 4.5Vto 5.5V 0.7  VCC -- V
VIL LOW-level input voltage VCC= 1.65Vto 1.95V - - 0.35  VCC V
VCC= 2.3Vto 2.7V - - 0.7 V
VCC= 2.7Vto 3.6V - - 0.8 V
VCC= 4.5Vto 5.5V - - 0.3  VCC V
VOL LOW-level output voltage VI = VIH or VIL
IO = 100 A; VCC =1.65Vto 5.5V - - 0.1 V
IO = 4 mA; VCC= 1.65V - - 0.45 V
IO = 8 mA; VCC =2.3V - - 0.3 V
IO = 12 mA; VCC= 2.7V - - 0.4 V
IO = 24 mA; VCC= 3.0V - - 0.55 V
IO = 32 mA; VCC= 4.5V - - 0.55 V
VOH HIGH-level output voltage VI = VIH or VIL
IO = 100 A; VCC= 1.65Vto 5.5V VCC  0.1 - - V
IO = 4 mA; VCC =1.65V 1.2 - - V
IO = 8 mA; VCC =2.3V 1.9 - - V
IO = 12 mA; VCC =2.7V 2.2 - - V
IO = 24 mA; VCC =3.0V 2.3 - - V
IO = 32 mA; VCC =4.5V 3.8 - - V input leakage current VI= 5.5Vor GND; VCC =0Vto 5.5V - 0.1 5 A
IOZ OFF-state output current VI = VIH or VIL; VO= 5.5Vor GND;
VCC= 3.6 V 0.1 10 A
IOFF power-off leakage current VI or VO =5.5 V; VCC =0 V - 0.1 10 A
ICC supply current VI= 5.5Vor GND;
VCC= 1.65Vto 5.5V; IO =0A
-0.1 10 A
ICC additional supply current per pin; VI =VCC 0.6 V; IO =0A;
VCC = 2.3 V to 5.5 V 500 A input capacitance - 2 - pF
NXP Semiconductors 74LVC2G126
Dual bus buffer/line driver; 3-state

[1] Typical values are measured at VCC = 3.3 V and Tamb= 25 C.
Tamb=
40Cto +125 C
VIH HIGH-level input voltage VCC= 1.65Vto 1.95V 0.65  VCC -- V
VCC= 2.3Vto 2.7V 1.7 - - V
VCC= 2.7Vto 3.6V 2.0 - - V
VCC= 4.5Vto 5.5V 0.7  VCC -- V
VIL LOW-level input voltage VCC= 1.65Vto 1.95V - - 0.35  VCC V
VCC= 2.3Vto 2.7V - - 0.7 V
VCC= 2.7Vto 3.6V - - 0.8 V
VCC= 4.5Vto 5.5V - - 0.3  VCC V
VOL LOW-level output voltage VI = VIH or VIL
IO = 100 A; VCC =1.65Vto 5.5V - - 0.1 V
IO = 4 mA; VCC= 1.65V - - 0.70 V
IO = 8 mA; VCC =2.3V - - 0.45 V
IO = 12 mA; VCC= 2.7V - - 0.60 V
IO = 24 mA; VCC= 3.0V - - 0.80 V
IO = 32 mA; VCC= 4.5V - - 0.80 V
VOH HIGH-level output voltage VI = VIH or VIL
IO = 100 A; VCC= 1.65Vto 5.5V VCC  0.1 - - V
IO = 4 mA; VCC= 1.65V 0.95 - - V
IO = 8 mA; VCC =2.3V 1.7 - - V
IO = 12 mA; VCC =2.7V 1.9 - - V
IO = 24 mA; VCC =3.0V 2.0 - - V
IO = 32 mA; VCC =4.5V 3.4 - - V input leakage current VI= 5.5Vor GND; VCC =0Vto 5.5V - - 20 A
IOZ OFF-state output current VI = VIH or VIL; VO= 5.5Vor GND;
VCC= 3.6 V 20 A
IOFF power-off leakage current VI or VO =5.5 V; VCC =0 V - - 20 A
ICC supply current VI= 5.5Vor GND;
VCC= 1.65Vto 5.5V; IO =0A 40 A
ICC additional supply current per pin; VI =VCC 0.6 V; IO =0A;
VCC = 2.3 V to 5.5 V 5 mA
Table 7. Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0V).
NXP Semiconductors 74LVC2G126
Dual bus buffer/line driver; 3-state
11. Dynamic characteristics

[1] Typical values are measured at Tamb =25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLH and tPHL
[3] ten is the same as tPZH and tPZL
[4] tdis is the same as tPLZ and tPHZ
[5] CPD is used to determine the dynamic power dissipation (PDin W). =CPD VCC2fi N+ (CL VCC2fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance inpF;
VCC= supply voltage in V;= number of inputs switching;
(CL VCC2fo)= sum of outputs.
Table 8. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure9.
tpd propagation delay nA to nY; see Figure7 [2]
VCC= 1.65Vto 1.95V 1.0 3.9 9.8 1.0 12.3 ns
VCC= 2.3Vto 2.7V 0.5 2.6 4.9 0.5 6.3 ns
VCC= 2.7V 1.0 2.8 4.7 1.0 5.9 ns
VCC= 3.0Vto 3.6V 0.5 2.4 4.3 0.5 5.4 ns
VCC= 4.5Vto 5.5V 0.5 1.9 3.2 0.5 4.0 ns
ten enable time nOE to nY; see Figure8 [3]
VCC= 1.65Vto 1.95V 1.0 4.1 10.0 1.0 12.5 ns
VCC= 2.3Vto 2.7V 1.0 2.6 5.0 1.0 6.3 ns
VCC= 2.7V 1.0 2.8 4.7 1.0 5.9 ns
VCC= 3.0Vto 3.6V 1.0 2.4 4.1 1.0 5.1 ns
VCC= 4.5Vto 5.5V 0.5 1.8 3.1 0.5 3.9 ns
tdis disable time nOE to nY; see Figure8 [4]
VCC= 1.65Vto 1.95V 1.0 3.3 12.6 1.0 15.4 ns
VCC= 2.3Vto 2.7V 0.5 1.9 5.7 0.5 7.5 ns
VCC= 2.7V 1.5 3.0 4.8 1.5 6.2 ns
VCC= 3.0Vto 3.6V 1.0 2.5 4.4 1.0 5.7 ns
VCC= 4.5Vto 5.5V 0.5 1.8 3.3 0.5 4.4 ns
CPD power dissipation
capacitance
per buffer; VI = GND to VCC [5]
output enabled - 17 - - - pF
output disabled - 5 - - - pF
NXP Semiconductors 74LVC2G126
Dual bus buffer/line driver; 3-state
12. Waveforms

Table 9. Measurement points

1.65Vto 1.95V 0.5  VCC 0.5  VCC VOL + 0.15 V VOH  0.15 V
2.3Vto 2.7V 0.5  VCC 0.5  VCC VOL + 0.15 V VOH  0.15 V
2.7V 1.5 V 1.5 V VOL + 0.3 V VOH  0.3 V
3.0Vto 3.6V 1.5 V 1.5 V VOL + 0.3 V VOH  0.3 V
4.5Vto 5.5V 0.5  VCC 0.5  VCC VOL + 0.3 V VOH  0.3 V
NXP Semiconductors 74LVC2G126
Dual bus buffer/line driver; 3-state

Table 10. Test data

1.65 V to 1.95V VCC  2.0ns 30pF 1k open GND 2  VCC
2.3 V to 2.7V VCC  2.0ns 30pF 500 open GND 2  VCC
2.7V 2.7 V  2.5ns 50pF 500 open GND 6 V
3.0 V to 3.6V 2.7 V  2.5ns 50pF 500 open GND 6 V
4.5 V to 5.5V VCC  2.5ns 50pF 500 open GND 2  VCC
NXP Semiconductors 74LVC2G126
Dual bus buffer/line driver; 3-state
13. Package outline

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