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74LVC00ABQNXPN/a55000avai74LVC00A; Quad 2-input NAND gate
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74LVC00ABQ-74LVC00AD-74LVC00ADB-74LVC00APW
Quad 2-input NAND gate
1. General description
The 74LVC00A provides four 2-input NAND gates.
Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall
times.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these
devices as translators in mixed 3.3 V and 5 V applications.
2. Features and benefits
5 V tolerant inputs for interfacing with 5 V logic Wide supply voltage range from 1.2Vto 3.6V CMOS low-power consumption Direct interface with TTL levels Complies with JEDEC standard: JESD8-7A (1.65Vto 1.95V) JESD8-5A (2.3Vto 2.7V) JESD8-C/JESD36 (2.7Vto 3.6V) ESD protection: HBM JESD22-A114F exceeds 2000V MM JESD22-A115-B exceeds 200V CDM JESD22-C101E exceeds 1000V Specified from −40 °C to +85 °C and −40 °C to +125 °C
3. Ordering information

74L VC00A
Quad 2-input NAND gate
Rev. 7 — 25 April 2012 Product data sheet
Table 1. Ordering information

74LVC00AD −40 °Cto +125°C SO14 plastic small outline package; 14 leads;
body width 3.9 mm
SOT108-1
74LVC00ADB −40 °Cto +125°C SSOP14 plastic shrink small outline package; 14 leads;
body width 5.3 mm
SOT337-1
74LVC00APW −40 °Cto +125°C TSSOP14 plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT402-1
74LVC00ABQ −40 °Cto +125°C DHVQFN14 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 14 terminals;
body 2.5×3× 0.85 mm
SOT762-1
NXP Semiconductors 74L VC00A
Quad 2-input NAND gate
4. Functional diagram

5. Pinning information
5.1 Pinning

5.2 Pin description

Table 2. Pin description

1A to 4A 1, 4, 9, 12 data input
1B to 4B 2, 5, 10, 13 data input
1Y to 4Y 3, 6, 8,11 data output
GND 7 ground (0 V)
VCC 14 supply voltage
NXP Semiconductors 74L VC00A
Quad 2-input NAND gate
6. Functional description

[1] H= HIGH voltage level; L= LOW voltage level; X= don’t care
7. Limiting values

[1] The minimum input voltage ratings may be exceeded if the input current ratings are observed.
[2] The output voltage ratings may be exceeded if the output current ratings are observed.
[3] For SO14 packages: above 70 °C derate linearly with 8 mW/K.
For (T)SSOP14 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
8. Recommended operating conditions

Table 3. Function selection[1]
Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage −0.5 +6.5 V
IIK input clamping current VI < 0 V −50 - mA input voltage [1] −0.5 +6.5 V
IOK output clamping current VO > VCC or VO < 0 V - ±50 mA output voltage output in HIGH or LOW-state [2] −0.5 VCC + 0.5 V output current VO = 0 V to VCC - ±50 mA
ICC supply current - 100 mA
IGND ground current −100 - mA
Ptot total power dissipation Tamb = −40 °C to +125°C [3]- 500 mW
Tstg storage temperature −65 +150 °C
Table 5. Recommended operating conditions

VCC supply voltage 1.65 - 3.6 V
functional 1.2 - - V input voltage 0 - 5.5 V output voltage output HIGH or LOW state 0 - VCC V
Tamb ambient temperature −40 - +125 °C
Δt/ΔV input transition rise and
fall rate
VCC = 1.65 V to 2.7 V 0 - 20 ns/V
VCC = 2.7 V to 3.6 V 0 - 10 ns/V
NXP Semiconductors 74L VC00A
Quad 2-input NAND gate
9. Static characteristics

[1] All typical values are measured at VCC=3.3 V (unless stated otherwise) and Tamb =25°C.
Table 6. Static characteristics

At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
VIH HIGH-level
input voltage
VCC = 1.2 V 1.08 - - 1.08 - V
VCC = 1.65 V to 1.95 V 0.65 × VCC- - 0.65 × VCC -V
VCC = 2.3 V to 2.7 V 1.7 - - 1.7 - V
VCC = 2.7 V to 3.6 V 2.0 - - 2.0 - V
VIL LOW-level
input voltage
VCC = 1.2 V - - 0.12 - 0.12 V
VCC = 1.65 V to 1.95 V - - 0.35 × VCC -0.35 × VCCV
VCC = 2.3 V to 2.7 V - - 0.7 - 0.7 V
VCC = 2.7 V to 3.6 V - - 0.8 - 0.8 V
VOH HIGH-level
output
voltage =VIHorVIL= −100 μA;
VCC =1.65Vto3.6V
VCC− 0.2 - - VCC− 0.3 - V= −4mA; VCC = 1.65 V 1.2 - - 1.05 - V= −8mA; VCC = 2.3V 1.8 - - 1.65 - V= −12 mA; VCC = 2.7 V 2.2 - - 2.05 - V= −18 mA; VCC = 3.0 V 2.4 - - 2.25 - V= −24 mA; VCC = 3.0 V 2.2 - - 2.0 - V
VOL LOW-level
output
voltage =VIHorVIL= 100 μA;
VCC= 1.65Vto 3.6 V - 0.2 - 0.3 V =4mA; VCC = 1.65 V - - 0.45 - 0.65 V =8mA; VCC = 2.3V - - 0.6 - 0.8 V =12mA; VCC = 2.7 V - - 0.4 - 0.6 V =24mA; VCC = 3.0 V - - 0.55 - 0.8 V input leakage
current
VCC = 3.6 V; VI =5.5V orGND- ±0.1 ±5- ±20 μA
ICC supply
current
VCC = 3.6 V; VI =VCCor GND; =0A
-0.1 10 -40 μA
ΔICC additional
supply
current
per input pin;
VCC= 2.7Vto 3.6V; =VCC− 0.6 V; IO =0A 5 500 - 5000 μA input
capacitance
VCC= 0 V to 3.6V; =GNDto VCC 4.0 -- -pF
NXP Semiconductors 74L VC00A
Quad 2-input NAND gate
10. Dynamic characteristics

[1] Typical values are measured at Tamb =25 °C and VCC = 1.2 V, 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.
[2] tpd is the same as tPLH and tPHL.
[3] Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.
[4] CPD is used to determine the dynamic power dissipation (PDin μW). =CPD× VCC2×fi×N+ Σ(CL× VCC2×fo) where: = input frequency in MHz; fo= output frequency in MHz= output load capacitance inpF
VCC= supply voltage in Volts= number of inputs switching
Σ(CL× VCC2×fo)= sum of the outputs
11. Waveforms

Table 7. Dynamic characteristics

Voltages are referenced to GND (ground=0 V). For test circuit see Figure7.
tpd propagation delay nA,nBto nY; see Figure6 [2]
VCC =1.2V - 12 - - - ns
VCC= 1.65Vto 1.95V 0.3 3.8 8.4 0.3 9.7 ns
VCC= 2.3Vto 2.7V 1.0 2.2 4.8 1.0 5.7 ns
VCC= 2.7V 1.0 2.3 5.1 1.0 5.9 ns
VCC= 3.0 V to 3.6V 0.5 2.0 4.3 0.5 5.1 ns
tsk(o) output skew time VCC= 3.0 V to 3.6V [3] - - 1.0 - 1.5 ns
CPD power dissipation
capacitance
per gate; VI =GNDto VCC [4]
VCC = 1.65 V to 1.95 V - 5.6 - - - pF
VCC = 2.3 V to 2.7 V - 8.9 - - - pF
VCC = 3.0 V to 3.6 V - 11.8 - - - pF
NXP Semiconductors 74L VC00A
Quad 2-input NAND gate

Table 8. Test data

1.2V VCC ≤ 2 ns 30pF 1 kΩ
1.65Vto 1.95V VCC ≤ 2 ns 30pF 1 kΩ
2.3Vto2.7V VCC ≤ 2 ns 30pF 500Ω
2.7V 2.7V ≤ 2.5ns 50pF 500Ω
3.0Vto 3.6V 2.7V ≤ 2.5ns 50pF 500Ω
NXP Semiconductors 74L VC00A
Quad 2-input NAND gate
12. Package outline

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