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74AHC74DNXPN/a13368avaiDual D-type flip-flop with set and reset; positive-edge trigger
74AHCT74PWN/a12500avaiDual D-type flip-flop with set and reset; positive-edge trigger


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74AHC74D-74AHCT74PW
Dual D-type flip-flop with set and reset; positive-edge trigger
General descriptionThe 74AHC74; 74AHCT74 is a high-speed Si-gate CMOS device and is pin compatible
with Low-Power Schottky TTL (LSTTL).Itis specifiedin compliance with JEDEC standard
No. 7-A.
The 74AHC74; 74AHCT74isa dual positive-edge triggered, D-type flip-flop with individual
data inputs (D), clock inputs (CP), set inputs (SD) and reset inputs (RD). It also has
complementary outputs (Q and Q).
The set and reset are asynchronous active LOW inputs that operate independent of the
clock input. Information on the data input is transferred to the Q output on the LOW to
HIGH transitionof the clock pulse. The data inputs mustbe stable one set-up time priorto
the LOW to HIGH clock transition for predictable operation.
Schmitt-trigger action in the clock input makes the circuit highly tolerant to slower clock
rise and fall times. Features Balanced propagation delays All inputs have Schmitt-trigger actions Inputs accept voltages higher than VCC Input levels: For 74AHC74: CMOS level For 74AHCT74: TTL level ESD protection: HBM EIA/JESD22-A114E exceeds 2000V MM EIA/JESD22-A115-A exceeds 200V CDM EIA/JESD22-C101C exceeds 1000V Multiple package options Specified from −40 °C to +85 °C and from −40 °C to +125°C
74AHC74; 74AHCT74
Dual D-type flip-flop with set and reset; positive-edge trigger
Rev. 05 — 9 June 2008 Product data sheet
NXP Semiconductors 74AHC74; 74AHCT74
Dual D-type flip-flop with set and reset; positive-edge trigger Ordering information Functional diagram
Table 1. Ordering information
74AHC74

74AHC74D −40 °C to +125°C SO14 plastic small outline package; 14 leads; body width
3.9 mm
SOT108-1
74AHC74PW −40 °C to +125°C TSSOP14 plastic thin shrink small outline package; 14 leads; body
width 4.4 mm
SOT402-1
74AHC74BQ −40 °C to +125°C DHVQFN14 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 14 terminals;
body 2.5×3× 0.85 mm
SOT762-1
74AHCT74

74AHCT74D −40 °C to +125°C SO14 plastic small outline package; 14 leads; body width
3.9 mm
SOT108-1
74AHCT74PW −40 °C to +125°C TSSOP14 plastic thin shrink small outline package; 14 leads; body
width 4.4 mm
SOT402-1
74AHCT74BQ −40 °C to +125°C DHVQFN14 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 14 terminals;
body 2.5×3× 0.85 mm
SOT762-1
NXP Semiconductors 74AHC74; 74AHCT74
Dual D-type flip-flop with set and reset; positive-edge trigger
NXP Semiconductors 74AHC74; 74AHCT74
Dual D-type flip-flop with set and reset; positive-edge trigger Pinning information
5.1 Pinning
5.2 Pin description
Table 2. Pin description

1RD 1 asynchronous reset direct input (active LOW) 2 data input
1CP 3 clock input (LOW to HIGH, edge-triggered)
1SD 4 asynchronous set direct input (active LOW) 5 true flip-flop output 6 complement flip-flop output
GND 7 ground (0V) 8 complement flip-flop output 9 true flip-flop output
2SD 10 asynchronous set direct input (active LOW)
2CP 11 clock input (LOW to HIGH, edge-triggered) 12 data input
2RD 13 asynchronous reset direct input (active LOW)
VCC 14 supply voltage
NXP Semiconductors 74AHC74; 74AHCT74
Dual D-type flip-flop with set and reset; positive-edge trigger Functional description

[1]H= HIGH voltage level;= LOW voltage level;= LOW to HIGH transition;
Qn+1= state after the next LOW to HIGH CP transition;= don’t care. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SO14 packages: above 70 °C the value of Ptot derates linearly at 8 mW/K.
For TSSOP14 packages: above 60 °C the value of Ptot derates linearly at 5.5 mW/K.
For DHVQFN14 packages: above 60 °C the value of Ptot derates linearly at 4.5 mW/K.
Table 3. Function table[1]
X X H L LH X X L H HL
LLX X H H - - ↑ L- - L H ↑ H- - H L
Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0V).
VCC supply voltage −0.5 +7.0 V input voltage −0.5 +7.0 V
IIK input clamping current VI < −0.5V [1] −20 - mA
IOK output clamping current VO < −0.5 V or VO > VCC + 0.5V [1] −20 +20 mA output current VO = −0.5V to (VCC + 0.5V) −25 +25 mA
ICC supply current - +75 mA
IGND ground current −75 - mA
Tstg storage temperature −65 +150 °C
Ptot total power dissipation Tamb= −40°Cto +125°C [2]- 500 mW
NXP Semiconductors 74AHC74; 74AHCT74
Dual D-type flip-flop with set and reset; positive-edge trigger Recommended operating conditions Static characteristics
Table 5. Operating conditions
74AHC74

VCC supply voltage 2.0 5.0 5.5 V input voltage 0 - 5.5 V output voltage 0 - VCC V
Tamb ambient temperature −40 +25 +125 °C
Δt/ΔV input transition rise and fall rate VCC= 3.0Vto 3.6V - - 100 ns/V
VCC= 4.5Vto 5.5V - - 20 ns/V
74AHCT74

VCC supply voltage 4.5 5.0 5.5 V input voltage 0 - 5.5 V output voltage 0 - VCC V
Tamb ambient temperature −40 +25 +125 °C
Δt/ΔV input transition rise and fall rate VCC= 4.5Vto 5.5V - - 20 ns/V
Table 6. Static characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0V).
74AHC74

VIH HIGH-level
input voltage
VCC= 2.0V 1.5 - - 1.5 - 1.5 - V
VCC= 3.0V 2.1 - - 2.1 - 2.1 - V
VCC= 5.5V 3.85 - - 3.85 - 3.85 - V
VIL LOW-level
input voltage
VCC= 2.0V - - 0.5 - 0.5 - 0.5 V
VCC= 3.0V - - 0.9 - 0.9 - 0.9 V
VCC= 5.5V - - 1.65 - 1.65 - 1.65 V
VOH HIGH-level
output voltage =VIHorVIL= −50 μA; VCC= 2.0V 1.9 2.0 - 1.9 - 1.9 - V= −50 μA; VCC= 3.0V 2.9 3.0 - 2.9 - 2.9 - V= −50 μA; VCC= 4.5V 4.4 4.5 - 4.4 - 4.4 - V= −4.0 mA; VCC= 3.0V 2.58 - - 2.48 - 2.40 - V= −8.0 mA; VCC= 4.5V 3.94 - - 3.80 - 3.70 - V
VOL LOW-level
output voltage =VIHorVIL =50 μA; VCC= 2.0V - 0 0.1 - 0.1 - 0.1 V =50 μA; VCC= 3.0V - 0 0.1 - 0.1 - 0.1 V =50 μA; VCC= 4.5V - 0 0.1 - 0.1 - 0.1 V= 4.0 mA; VCC= 3.0V - - 0.36 - 0.44 - 0.55 V= 8.0 mA; VCC= 4.5V - - 0.36 - 0.44 - 0.55 V
NXP Semiconductors 74AHC74; 74AHCT74
Dual D-type flip-flop with set and reset; positive-edge trigger
input leakage
current= 5.5Vor GND;
VCC=0Vto 5.5V - 0.1 - 1.0 - 2.0 μA
ICC supply current VI =VCCor GND; IO =0A;
VCC= 5.5V - 2.0 - 20 - 40 μA input
capacitance =VCCor GND - 3 10 - 10 - 10 pF
74AHCT74

VIH HIGH-level
input voltage
VCC = 4.5Vto 5.5V 2.0 - - 2.0 - 2.0 - V
VIL LOW-level
input voltage
VCC = 4.5Vto 5.5V - - 0.8 - 0.8 - 0.8 V
VOH HIGH-level
output voltage =VIHor VIL; VCC= 4.5V= −50μA 4.4 4.5 - 4.4 - 4.4 - V= −8.0 mA 3.94 - - 3.80 - 3.70 - V
VOL LOW-level
output voltage =VIHor VIL; VCC= 4.5V =50μA - 0 0.1 - 0.1 - 0.1 V= 8.0 mA - - 0.36 - 0.44 - 0.55 V input leakage
current= 5.5Vor GND;
VCC=0Vto 5.5V - 0.1 - 1.0 - 2.0 μA
ICC supply current VI =VCCor GND; IO =0A;
VCC= 5.5V - 2.0 - 20 - 40 μA
ΔICC additional
supply current
per input pin; =VCC− 2.1 V; other pins
at VCCor GND; IO =0A;
VCC= 4.5Vto 5.5V - 1.35 - 1.5 - 1.5 mA input
capacitance =VCCor GND - 3 10 - 10 - 10 pF
Table 6. Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0V).
NXP Semiconductors 74AHC74; 74AHCT74
Dual D-type flip-flop with set and reset; positive-edge trigger
10. Dynamic characteristics
Table 7. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure9.
74AHC74

tpd propagation
delay
nCPto nQ, nQ; see Figure7 [2]
VCC= 3.0Vto 3.6V=15pF - 5.2 11.9 1.0 14.0 1.0 15.0 ns=50pF - 7.4 15.4 1.0 17.5 1.0 19.5 ns
VCC= 4.5Vto 5.5V=15pF - 3.7 7.3 1.0 8.5 1.0 9.5 ns=50pF - 5.2 9.3 1.0 10.5 1.0 12.0 ns
nSD, nRD to nQ, nQ;
see Figure8
VCC= 3.0Vto 3.6V=15pF - 5.4 12.3 1.0 14.5 1.0 15.5 ns=50pF - 7.7 15.8 1.0 18.0 1.0 20.0 ns
VCC= 4.5Vto 5.5V=15pF - 3.7 7.7 1.0 9.0 1.0 10.0 ns=50pF - 5.3 9.7 1.0 11.0 1.0 12.5 ns
fmax maximum
frequency
see Figure7
VCC= 3.0Vto 3.6V=15pF 80 125 - 45 - 45 - MHz=50pF 50 75 - 70 - 70 - MHz
VCC= 4.5Vto 5.5V=15pF 130 170 - 110 - 110 - MHz=50pF 90 115 - 75 - 75 - MHz pulse width CP HIGHor LOW;
nSD, nRD LOW;
see Figure7 and8
VCC= 3.0Vto 3.6V 6.0 - - 7.0 - 7.0 - ns
VCC= 4.5Vto 5.5V 5.0 - - 5.0 - 5.0 - ns
tsu set-up time nD to nCP; see Figure7
VCC= 3.0Vto 3.6V 6.0 - - 7.0 - 7.0 - ns
VCC= 4.5Vto 5.5V 5.0 - - 5.0 - 5.0 - ns hold time nD to nCP; see Figure7
VCC= 3.0Vto 3.6V 0.5 - - 0.5 - 0.5 - ns
VCC= 4.5Vto 5.5V 0.5 - - 0.5 - 0.5 - ns
trec recovery
time
nRD to nCP; see Figure8
VCC= 3.0Vto 3.6V 5.0 - - 5.0 - 5.0 - ns
VCC= 4.5Vto 5.5V 3.0 - - 3.0 - 3.0 - ns
NXP Semiconductors 74AHC74; 74AHCT74
Dual D-type flip-flop with set and reset; positive-edge trigger

[1] Typical values are measured at nominal supply voltage (VCC=3.3 V and VCC=5.0V).
[2] tpd is the same as tPLH and tPHL.
[3] CPDis used to determine the dynamic power dissipation (PD in μW). =CPD× VCC2×fi× N+ Σ(CL× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance inpF;
VCC= supply voltage in V;= number of inputs switching;
Σ(CL× VCC2×fo)= sum of the outputs.
CPD power
dissipation
capacitance=1 MHz; VI= GNDto VCC [3] -12- - - - - pF
74AHCT74; VCC= 4.5Vto 5.5V

tpd propagation
delay
nCPto nQ, nQ; see Figure7 [2]=15pF - 3.3 7.8 1.0 9.0 1.0 10.0 ns=50pF - 4.8 8.8 1.0 10.0 1.0 11.0 ns
nSD, nRD to nQ, nQ;
see Figure7=15pF - 3.7 10.4 1.0 12.0 1.0 13.0 ns=50pF - 5.3 11.4 1.0 13.0 1.0 14.5 ns
fmax maximum
frequency
see Figure7=15pF 100 160 - 80 - 80 - MHz=50pF 80 140 - 65 - 65 - MHz pulse width CP HIGHor LOW;
nSD, nRD LOW;
see Figure7 and8
5.0 - - 5.0 - 5.0 - ns
tsu set-up time nD to nCP; see Figure7 5.0 - - 5.0 - 5.0 - ns hold time nD to nCP; see Figure7 0- - 0 - 0 - ns
trec recovery
time
nRD to nCP; see Figure8 3.5 - - 3.5 - 3.5 - ns
CPD power
dissipation
capacitance=1 MHz; VI= GNDto VCC [3] -16- - - - - pF
Table 7. Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure9.
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