74AHC1G04GW ,InverterPin configuration. Fig.2 Logic symbol.handbook, halfpage12 handbook, halfpage4inA outYMNA110MNA109 ..
74AHC1G04SE-7 , SINGLE INVERTER GATE
74AHC1G06GV ,74AHC1G06; 74AHCT1G06; Inverter with open drain outputFEATURES DESCRIPTION• High noise immunity The 74AHC1G/AHCT1G06 is a high-speed Si-gate CMOSdevice.• ..
74AHC1G06GW ,Inverter with open drain outputFEATURES DESCRIPTION• High noise immunity The 74AHC1G/AHCT1G06 is a high-speed Si-gate CMOSdevice.• ..
74AHC1G07GV ,74AHC1G07; 74AHCT1G07; Buffer with open-drain outputGeneral description74AHC1G07 and 74AHCT1G07 are high-speed Si-gate CMOS devices. They provide anon- ..
74AHC1G07GW ,Buffer with open-drain outputINTEGRATED CIRCUITSDATA SHEET74AHC1G07; 74AHCT1G07Buffer with open-drain outputProduct specification ..
74HC32D ,Quad 2-input OR gatePin configuration DHVQFN145.2 Pin description Table 2. Pin descriptionSymbol Pin Description1A to 4 ..
74HC32DB ,Quad 2-input OR gateGENERAL DESCRIPTION• Wide supply voltage range from 2.0 to 6.0 V The 74HC/HCT32 is a high-speed Si- ..
74HC32DB ,Quad 2-input OR gateGENERAL DESCRIPTION• Wide supply voltage range from 2.0 to 6.0 V The 74HC/HCT32 is a high-speed Si- ..
74HC32N ,74HC32; 74HCT32; Quad 2-input OR gateINTEGRATED CIRCUITSDATA SHEET74HC32; 74HCT32Quad 2-input OR gateProduct specification 2003 Dec 12Sup ..
74HC32PW ,74HC32; 74HCT32; Quad 2-input OR gatePin configuration DIP14, SO14 and (T)SSOP14 Fig 5.
74HC354 ,8-input multiplexer/register with transparent latches; 3-state
74AHC1G04GW
Inverter
Philips Semiconductors Product specification
Inverter 74AHC1G04; 74AHCT1G04
FEATURES Symmetrical output impedance High noise immunity ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000V EIA/JESD22-A115-A exceeds
200V Low power dissipation Balanced propagation delays Very small 5-pin package Output capability: standard.
DESCRIPTIONThe 74AHC1G/AHCT1G04 is a
high-speed Si-gate CMOS device.
The 74AHC1G/AHCT1G04 provides
the inverting buffer.
FUNCTION TABLESee note1.
Note H= HIGH voltage level.= LOW voltage level.
QUICK REFERENCE DATAGND=0 V; Tamb =25 °C; tr =tf≤ 3.0 ns.
Notes CPD is used to determine the dynamic power dissipation PD (μW). =CPD× VCC2×fi +(CL× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage inV. The condition is VI= GNDto VCC.
PINNING
ORDERING AND PACKAGE INFORMATION
Philips Semiconductors Product specification
Inverter 74AHC1G04; 74AHCT1G04
Philips Semiconductors Product specification
Inverter 74AHC1G04; 74AHCT1G04
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground=0 V).
Notes The input and output voltage ratings may be exceeded if the input and output current ratings are observed. Above +55 °C the value of PD derates linearly with 2.5 mW/K.
Philips Semiconductors Product specification
Inverter 74AHC1G04; 74AHCT1G04
DC CHARACTERISTICS
Family 74AHC1GOver recommended operating conditions; voltage are referenced to GND (ground=0 V).
Philips Semiconductors Product specification
Inverter 74AHC1G04; 74AHCT1G04
Family 74AHCT1GOver recommended operating conditions; voltage are referenced to GND (ground=0 V).
