40MT120UH ,1200V UltraFast 10-30 kHz Half-Bridge IGBT in a MTP packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameters Min Typ Max Units Tes ..
40PT1140AX , 40 PIN DIP ETHERNET 10/100 BASE -TX HIGH SPEED LAN MAGNETICS
40PT1140AX , 40 PIN DIP ETHERNET 10/100 BASE -TX HIGH SPEED LAN MAGNETICS
40ST1041AXMLF , 40 PIN SMD ETHERNET 10/100 BASE -TX HIGH SPEED LAN MAGNETICS
40ST1041D , 40 PIN SMD ETHERNET 10/100 BASE QUAD PORT TRANSFORMER
40ST1041EX , 40 PIN SMD ETHERNET 10/100 BASE QUAD PORT TRANSFORMER
5451DMQB ,7 V, dual 2-wide 2-input AOI gateNatiqnal _
Semiconductor
5451/DM7451
Dual 2-Wide, 2-lnput AOI Gate
54550-0671 , 0.50mm (.020") Pitch FFC/FPC Connector, 1.20mm (.047") Height, Right Angle, SMT,ZIF, Top Contact Style, 6 Circuits, Gold (Au) Contact Plating
54550-1871 , 0.50mm (.020") Pitch FFC/FPC Connector, 1.20mm (.047") Height, Right Angle, SMTZIF, Top Contact Style, 18 Circuits, Gold (Au) Contact Plating
5474 ,Dual Positive-Edge Triggered D Flip-Flop with Preset, Clear and Complementary OutputsFeaturesof the rising edge of the clock. The data on the D input mayYAlternate Military/Aerospace d ..
5474DMQB ,Dual Positive-Edge-Triggered D Flip-Flops with Preset/ Clear and Complementary OutputsFeaturesof the rising edge of the clock. The data on the D input mayYAlternate Military/Aerospace d ..
5474DMQB ,Dual Positive-Edge-Triggered D Flip-Flops with Preset/ Clear and Complementary OutputsFeaturesof the rising edge of the clock. The data on the D input mayYAlternate Military/Aerospace d ..
40MT120UH
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a MTP package
127126 rev. C 02/03
International
1)t2iR Rectifier 40MT120UH
"HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT
Features
. UltraFast Non Punch Through (NPT)
Technology
. Positive VCE(ON)Temperature Coefficient
. 10ps Short Circuit Capability =
. HEXFRED TM Antiparallel Diodes with H VCES 1200V
UltraSoft Reverse Recovery j -
Low Diode VF lc - 80A
Square RBSOA o4 = o
Aluminum Nitride DBC 1 To 25 C
Optional SMT Thermistor (NTC)
Very Low Stray Inductance Design for
High Speed Operation
. UL approved (file E78996)
Benefits
. Optimized for Welding, UPS and SMPS
Applications
. Rugged with UltraFast Performance
. Benchmark Efficiency above 20KHz
. Outstanding ZVS and Hard Switching
Operation
. Low EMI, requires Less Snubbing
. Excellent Current Sharing in Parallel
Operation
. Direct Mounting to Heatsink
. PCB Solderable Terminals
Absolute Maximum Ratings
Parameters Max Units
VCES Collector-to-Emir Breakdown Voltage 1200 V
I c Continuos Collector Current @ Tc = 25°C 80 A
@ Tc = 105°C 40
I CM Pulsed Collector Current 160
l LM Clamped Inductive Load Current 160
I F Diode Continuous Forward Current @ Tc = 105°C 21
I FM Diode Maximum Forward Current 160
VGE Gate-to-Emitter Voltage * 20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
PD Maximum Power Dissipation (only IGBT) @ TC = 25°C 463 W
@ TC = 100°C 185
1
40MT120UH
I27126 rev. C 02/03 rveryotif.),ryol
TOR Rectifier
Electrical Characteristics tt TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emi/ea/do/ml/ole; 1200 V VGE = 0V, Ic = 250pA
AV(BR)CESI Temperature Coeff. of +1.1 V/°C VGE = 0V, lc = 3mA (25-125°C)
ATJ Breakdown Voltage
VCE(ON) Collector-to-Emil/alum/forage 3.36 3.59 V VGE = 15V, Ic = 40A
4.53 4.91 VGE =15V, Ic = 80A
3.88 4.10 VGE =15V, Ic = 40A T: =150°C
5.35 5.68 VGE =15V, Ic = 80A T, = 150°C
VGE(th) Gate Threshold Voltage 4 6 V VCE = Var, lc = 500pA
AVGE(m)/ Temperature Coeff. of -12 mW'C VCE = VGE, Ic = 1mA (25-125°C)
AT, Threshold Voltage
gfe Transconductance 35 S VCE = 50V, Ic = 40A, PW = 80ps
ICES Zero Gate Voltage CollectorCurrent 250 pA VGE = 0V, VCE = 1200V, TJ = 25''C
0.4 1.0 mA VGE = 0V, VCE = 1200V, TJ = 125°C
0.2 10 VGE = 0V, VCE = 1200V, TJ = 150°C
IGEs Gate-to-Emitter Leakage Current i250 nA VGE = * 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
09 Total Gate Charge (turn-on) 399 599 nC Ic = 40A
Qge Gate-EmitterCharge (turn-on) 43 65 Vcc = 600V
Qgc Gate-Collector Charge (turn-on) 187 281 VGE = 15V
Eon Tum-On Switching Loss 1142 1713 PJ Vcc = 600V, lc = 40A
Eoff Tum-Off Switching Loss 1345 2018 VGE = 15V, R9 = 59, L = 200pH
Etot Total Switching Loss 2487 3731 To = 25°C, Energy losses include tail
and diode reverse recovery
Eon Tum-On Switching Loss 1598 2397 pJ Vcc = 600V, lc = 40A
Eoff Tum-Off Switching Loss 1618 2427 VGE = 15V, R9 = 59, L = 200pH
Etot Total Switching Loss 3216 4824 To = 125°C, Energy losses include tail
and diode reverse recovery
Cies Input Capacitance 5521 8282 pF VGE = 0V
Coes Output Capacitance 380 570 Vcc = 30V
Cres Reverse Transfer Capacitance 171 257 f= 1.0 MHz
RBSOA Reverse Bias Safe Operating Area full square To = 150°C, IC = 160A
Vcc = 1000V, Vp = 1200V
R9 = 59, VGE = +15V to 0v
SCSOA Short Circuit Safe Operating Area 10 us To = 150°C
Vcc = 900V, Vp = 1200V
R9 = 59, V95 = +15V to 0v
2
