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40CTQ045 -40CTQ045-1-40CTQ045S-40CTQ045STRL-40CTQ045STRR Fast Delivery,Good Price
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40CTQ045 |40CTQ045IR N/a2000avai45V 40A Schottky Common Cathode Diode in a TO-220AB package
40CTQ045-1 |40CTQ0451IRN/a230avai45V 40A Schottky Common Cathode Diode in a TO-262 package
40CTQ045SVISHAYN/a26avai45V 40A Schottky Common Cathode Diode in a D2-Pak package
40CTQ045SIRN/a707avai45V 40A Schottky Common Cathode Diode in a D2-Pak package
40CTQ045STRLIRN/a2485avai45V 40A Schottky Common Cathode Diode in a D2-Pak package
40CTQ045STRRIRN/a8500avai45V 40A Schottky Common Cathode Diode in a D2-Pak package


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40CTQ045 -40CTQ045-1-40CTQ045S-40CTQ045STRL-40CTQ045STRR
45V 40A Schottky Common Cathode Diode in a TO-220AB package
International
152R Rectifier
Bulletin PD-20544 rev.C 12/01
4OCTQO45
40CTQ045S
4OCTQO45-1
SCHOTTKYRECTFIER
Major Ratings and Characteristics
Description/Features
Common
Cathode
i C) 2 i
1 Common 3
Anode Cambde Anode
TO-220
Common
Cathode
1 Common
Anode Cathode
This centertap Schottky rectifier has been optimized for very
Characteristics Values Units low forward voltage drop, with moderate leakage. The
proprietary barriertechnology allows for reliable operation upto
I Rectangular 40 A 150° C junction temperature. Typical applications are in
F(AV) f switching power supplies, converters, free-wheeling diodes,
wave arm and reverse battery protection.
VRRM 45 V o 150° C TJ operation
I . 124 A o Centertap configuration
FSM @ tp - 5 pssme O . Very low forward voltage drop
- D . High purity, high temperature epoxy encapsulation for
VF @20Apk,To= 125 C 0.48 V enhanced mechanical strength and moisture resistance
(perleg) o Highfrequency operation
T range -55to150 ( . anrqfing for enhanced ruggedness and long term
J reliability
Case Styles
4OCTQ... S 4OCTQ... -1
Common
Cathode
j, 2 i
3 1 Common 3
Anode Anode Cathode Mode
TO-262

40CTQO45, 40CTQ045S, 40CTQO45-1 Internofigrjol
Bulletin PD-20544 rev.C 12/01 IOR Rectifier
Voltage Ratings
40CTQ045
Parameters 40CTQ045S
40CTQO45-1
M, Max. DC Reverse Voltage (V) 45
Vva Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Values Units Conditions
IRAV) Max.AverageForward (PerLeg) 20 A 50%duty cycle@TC=116°C,rectangular wave form
Current *See Fig.5 (PerDevice) 40
|FSM Max.PeakOneCycleNon-Repetitive 1240 A 5ps Sine or3ps Rect.pulse Followin . any rated
load con men and with
Surge Current (Per Leg) *See Fig.7 350 10ms Sine or6ms Rect. pulse rated VRRM applied
EAS Non-RepetitiveAvaIancheEnergy 20 mJ T J = 25 "C, IAS= 3Amps, L=4.40 mH
(PerLeg)
IAR RepetitiveAvalancheCurrent 3 A Current decaying linearly to zero in 1 psec
(PerLeg) Frequency limited by TJmax.VA=1.5xVR typical
Electrical Specifications
Parameters Values Units Conditions
VFM Max.ForwardVoltage Drop 0.53 V @20A T = 25 DC
(Per Leg) * See Fig. 1 (1) 0.68 V @ 40A J
0.48 V @ 20A Ct
0.67 v @ 40A T, = 125 C
IRM Max.ReverseLeakageCurrent 3 mA T, = 25 "C V = ratedV
(Per Leg) 'See Fig.2 (1) 115 mA To-- 125°C R R
VFUO) ThreshoIdVoltage 0.27 V T J = T J max.
rt Forward Slope Resistance 8.72 mn
c, Max. Junction Capacitance (PerLeg) 2800 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25''C
LS Typical Series Inductance (PerLeg) 8.0 + Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 VI us
(Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters Values Units Conditions
T J Max.JunctionTemperatureRange -55to150 ''C
stg Max.StorageTemperatureRange -55to150 "C
Rmc Max.ThermalResistanceJunction 2.0 "CAN DC operation
to Case (Per Leg)
ch Max.ThermalResistanceJunction 1.0 "CAN DC operation
to Case (Per Package)
Rmos TypicalThermaIResistance,Case 0.50 TAN Mounting surface,smooth and greased
to Heatsink (only for TO-220)
wt ApproximateWeight 2(0.07) g(oz.)
T MountingTorque Min. 6(5) Kg-cm
Max. 12(10) (Ibf-in)
2
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