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52207-0685 , 1.00mm (.039") Pitch FFC/FPC Connector, SMT, Right Angle, ZIF, Top Contact Style Receptacle, 6 Circuits, Lead-free, High Barrier Packaging
3SK293
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICAITONS)
TOSHIBA
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE
3SIK293
3SK293
TV TUNER, UHF RF AMPLIFIER APPLICATIONS iii .' mm
q Superior Cross Modulation Performance "c/i-is-i-irc-;
1.25 i 0.1
q Low Reverse Transfer Capacitance : Crss=16fF (Typ.)
0 Low Noise Figure : NF=1.5dB (Typ.) N -. 3 ' 17 .73
MAXIMUM RATINGS (Ta = 25°C) tl. tl. 'k.
CHARACTERISTIC SYMBOL RATING UNIT CT, "H -
Drain-Source Voltage VDS 12.5 V we I 3
Gate I-Source Voltage VGlS i8 V i"? _ i f)
Gate 2-Source Voltage vats i8 V 2 o 1 I,
Drain Current ID 30 mA ii)'
Drain Power Dissipation PD 100 mW C)
0 1. DRAIN
Channel Temperature Tch 125 C 2. SOURCE
Storage Temperature Range Tstg -55--125 T 3. GATE 1
4. GATE 2
MARKING TYPE NAME USQ
4 n 3 EV—
/ p" JEDEC -
U F EIAJ -
1 tl 2 El tlt z 2-2K1B
ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 0.006g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate 1 Leakage Current IGlSS VDs=0, VGlS= i6V, VG2S=0 - - i50 nA
Gate 2 Leakage Current IG2SS VDs=0, VG1s--0, VG232 i6V - - i50 nA
. VG13= -0.5V, VG2S-- -0.5V,
Drain-Source Voltage V (BR) DSX ID = 1 0 Op A 12.5 - - V
. VDS=6V, VG1s=0,
Drain Current IDSS VG2S= 4.5V - - 0.1 mA
Gate l-Source Cut-off Vng--6V, Vggs=4.5V,
Voltage VG1S(OFF) ID = lOOpA 0.8 0.8 1.3 V
Gate 2-Source Cut-off VDs=6V, VGIS=4.0V,
Voltage VG2S (OFF) ID-- 100/zA 0.5 1.0 1.5 v
Forward Transfer VDS=6V, VG23=4.5V,
Admittance lyfsl ID = 10mA, f: lkHz 22 26 - mS
Input Capacitance Ciss VDSZBV, VG2S=4.5V, - 2.0 2.6 pF
Reverse Transfer Capacitance Crss ID = 10mA, f-- IMHz - 16 40 fF
P . = = 20 22.5 -
T" Slain Gps VDS 6V, VG2S 4.5V, dB
Noise Figure NF In-- lOmA, f-- 800MHz - 1.5 2.5
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity is,n1yuln.erabjlity to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
TOSHIBA 3SK293
Fig.1 800MHz Gps, NF TEST CIRCUIT
INPUT SHIELD OUTPUT
RG = 500 RG = 500.
cps Arh
i L4 C
fi HF. 1000pF
1000pF 35' E ,1000PF
I I II
E i 1000pF lt l t,
CD O CD
2 T__ __T: _T g
o C} o o
H x g; H ,-i
Cro o o
CQ VG2S VDS
L1--L4 : ¢O.8mm SILVER PLATED COPPER WIRE
C : AIR TRIMMER TTA25A200A(MURATA MFG, Co., Ltd.)
RFC 1 : ¢0.35mm COPPER WIRE 3mm ID, 7T
RFC 2 : ¢0.35mm COPPER WIRE 3mm ID, 10T
1996-11-11 2/5
TOSHIBA 3SK293
ID - VDS ID - VDS
COMMON
SOURCE COMMON SOURCE
A VG25=4.5V A VG1s--4.0V
<1 Ta = 25°C E Ta = 25''C
o 2 4 6 8 10 0 2 4 6 8 0
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGlS ID - VG2S
COMMON SOURCE VG2s=4-5V COMMON SOURCE
,4 VDS=6V A VDS=6V
li Ta = 25°C li Ta = 25''C
?-5: E
o 1 2 3 4 5 o 1 2 3 4 5
GATE 1-SOURCE VOLTAGE VGls (V) GATE 2-SOURCE VOLTAGE VG2s (V)
lstl - VGIS lstl - ID
COMMON SOURCE
VDs=6V Vg2s=4.5v
Ta = 25°C
COMMON
SOURCE
VDS = 6V
Ta = 25°C
VG2s= 4.5V
FORWARD TRANSFER ADMITTANCE
”Id (“15)
FORWARD TRANSFER ADMITTANCE
lstl (mS)
0 1 2 3 4 5 0 4 8 12 16 20
GATE 1-SOURCE VOLTAGE VG15 (V) DRAIN CURRENT ID (mA)
1996-11-11 3/5
TOSHIBA
3SK293
Gps - VGZS
Ciss - VG2S
COMMON SOURCE
/ 't VDS=6V
a / 8 VGlS l ngs=4.6V
S 10 l - ID = 10mA
/ VDD 0
ga / VG2sit' a f=1MHz
t" CY g [si Ta = 25°C
a 0 o <
'is": ll F;
a J pt E
3 -10 VDD-ev 5
f? (=VDs)+RX10mA Fe
at VG25=4.5V 2
-20 f-- 800MHz -
Ta=25°C
0 2 4 6 8 10 -4 -2 0 2 4
GATE 2-SOURCE VOLTAGE qus (V) GATE 2-SOURCE VOLTAGE ngs (V)
Gps, NF - VDS Gps, NF - ID
25 10 26
A A ps
fir) tl, § 5l
2; COMMON SOURCE E E E
U 15 VG25=4.5V m U COMMON SOURCE m
E ID =10mA g E VDS = 6V g
g 10 f=800MHz S? g VG2S--4.5V g
n: Ta=25°C We n: f=800MHz We
M M M M
5 S'?, 5 Ta=25°C S'?,
8 5 , 8 g
0 2 4 6 8 IO 12 4 8 12 16 20 24
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (mA)
st - f
Yis - f FORWARD TRANSFER CONDUCTANCE gfs (mS)
16 I [ 10 15 20 25 30
A o f=1GHz ti 0 1
, I E COMMON SOURCE f .
V "r'''''" os t v = 6V 0.2
.2 12 ,,wr"" a: 4 DS 0.3
AI 0.8 9: VG25=4.5V I 0.4
8 0.7 'il, IC2h, 0.5
z at E = . _ T 0.6
g 8 0.6 Ev 8 Ta=25°C '
a 0.5 , a 0.7
8 I ff 1 .
p, 0.4 COMMON SOURCE e 12 18
S 4 0.3 VDs=6V g f 0.9
VG23=4.5V <
E 0.2 ID=10mA E 1 J l
H 0.1 f-- 0.1G~lGHz a 6 f=IGHz
0 l Ta=25°C
0 1 2 3 4 5
INPUT CONDUCTANCE gis (mS)
1996-11-11 4/5
TOSHIBA 3SK293
Yrs - f
REVERSE TRANSFER CONDUCTANCE grs (mS) Yos - f
0 0.01 0.02 0.03 0.04
ti 0.04 I fit
if: f--IGHz- m
g 0.02 f JD
2, / 8
u: tit 0 0.9 ,3 0.6
E; l 8 0 5 COMMON SOURCE
D . v =6V
F 0.1 COMMON MI 0.4 VDS =4 5V
g -0.02 SOURCE S 0 3 G25 '
< VDS=6V & . ID=10mA
E VGZS=4-5V D 0.2 f=0.1G~1GHz
g ID-- lOmA o 0 1 Ta=25°C
-0.04 f=0.1G~1GHz .
Ta=25°C 0 0.1 0.2 0.3 0.4 0.5 0.6
OUTPUT CONDUCTANCE gos (mS)
DRAIN POWER DISSIPATION PD (mW)
0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE Ta (T)
1996-11-11 5/5
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