3SK284 ,N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)APPLICATIONS. Unit in mmMAXIMUM RATINGS (Ta = 25°C)CTT A RA CTERIR’FTC SVMROT. RATINC, I TNTT 1. 25 ..
3SK291 ,Field Effect Transistor Silicon N-Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier ApplicationsApplications Unit: mm Superior cross modulation performance Low reverse transfer capacitanc ..
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3SK293 ,N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICAITONS)3SK2932§K7QR'l‘-‘TV TUNER, UHF RF AMPLIFIER
3SK294 ,N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ VHF RF AMPLIFIER APPLICATIONS)3SK2942§K7QA'l‘-‘TV TUNER, VHF RF AMPLIFIER APPLICATION Unit in mmDuperlor LII'OSS lVlOQulaElon rer ..
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51L05C , LOW-DROPOUT VOLTAGE REGULATORS
51MT160KB ,1600V 3 Phase Bridge in a INT-A-Pak packageFeatures55 APackage fully compatible with the industry standard INT-A-pak90 Apower modules series11 ..
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521-1 ,Winfield Corporation - 1.8V LVCMOS Surface Mount Crystal Clock Oscillator
52207-0685 , 1.00mm (.039") Pitch FFC/FPC Connector, SMT, Right Angle, ZIF, Top Contact Style Receptacle, 6 Circuits, Lead-free, High Barrier Packaging
3SK284
N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
TOSHIBA 3SK284
TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE
35K284
TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm
MAXIMUM RATINGS (Ta = 25°C) 2110 1
CHARACTERISTIC SYMBOL RATING UNIT t. 25.10.! I
Gate l-Drain Voltage VGlDO -6 V 1---Ef- l, tl
Gate 2-Drain Voltage VGZDO -6 V ii c; t ' ii'
Gate l-Source Voltage VGlS -4 V e3 C.. t 3 5
Gate 2-Source Voltage VGZS -4 V --7- i 13::
Gate 1 Current 1G1 1 mA I
Gate 2 Current 1G2 1 mA M l ['l;
Power Dissipation PD 100 mW l! c." l, 'i':
Channel Temperature Teh 125 T d O i 1- -
Storage Temperature Range Tstg -55--125 T l. GATE 1 g
. 2. GATE 2 e,
Marking 3. DRAIN
n n 4. SOURCE
U 1 JEDEC -
EIAJ -
n 3 n 4 TOSHIBA 2-2K1B
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 0.006g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate 1 Leakage Current IGISS 11tis==0a"ls= -3V, - - -4 PA
Gate 2 Leakage Current IGZSS ¥g§S=§jg$1S=m - - -4 PA
Drain Current IDSS $133st VG1S=0, 4 - 16 mA
Gate l-Source Cut-off Voltage VGlS(OFF) ¥D=81=()%YJAVG2S=O’ -0.5 - -1.5 V
Gate 2-Source Cut-off Voltage VGZS(OFF) EDEEEZAVGIS=Q -0.5 - -1.5 V
Forward Transfer Admittance lyssl ED351321], P]: fitWh5v, - 12 - mS
Input Capacitance Ciss VDS=2V, VG2s=0.5V, - 0.65 1.3 F
Reverse Transfer Capacitance Crss ID--2mA, f=IMHz 0.015 0.03 p
Power Gain Gps VDS=2V, VG2S=0.5V, 15 18.5 - dB
Noise Figure NF ID=2mA, f = 800MHz (Fig.1) - 1.3 2.5
CAUTION
GaAs(Gallium Arsenide) is used in this product. The dust or vapor can be dangerous to
humans. Do not break, cut, crush or dissolve chemically. Dispose of this product properly
according to law. Do not intermingle with normal industrial or domestic waste.
961001 EAC2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-05-12 1/5
TOSHIBA 3SK284
FIG.1 800MHz Gps, NF TEST CIRCUIT
RG 5 500
OUTPUT
SHIELD RL = 50 n
L1--L4 : ¢1.0mm SILVER PLATED COPPER WIRE
C : AIR TRIMMER TTA25A200A (MURATA MFG. Co., LTD.)
RFC 1 .' ¢0.35mm COPPER WIRE 3mm ID, 7T
RFC 2 .' ¢0.35mm COPPER WIRE 3mm ID, 10T
961001 EAC2'
O Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or
pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the
products with other industrial waste or with domestic garbage.
O The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
, implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T e information contained herein is subject to change without notice.
1997-05-12 2/5
TOSHIBA
3SK284
DRAIN CURRENT
ID - VDS
COMMON SOURCE
VG25=0V
Ta =25°C
2 4 6 8
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGlS
COMMONSOURCE
VDS=2V
Ta=25°C
v =05v / 8
as [27/622,
,t)''''i''i'.-',.-.
(f ’1 4
-----'--
tC---- -0.5
-1.2 -0.8 -0.4 0
GATE 1-SOURCE VOLTAGE les (V)
[D (mA)
DRAIN CURRENT
DRAIN CURRENT
ID - VDS
COMMON SOURCE
VGlS=0V
Ta=25''C
- -0.2
/ _.,.----''''''"
I w,,,,---''"'""
/ ...-----'" ----'"" -0.4
--------" -0.6
/ ---- l
o 2 4 6 8
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGZS
COMMON SOURCE
VDS=2V
Ta=25°C
VGls=OV
s'iiC..-.----l--s6-
-1.2 -0.8
GATE 2-SOURCE VOLTAGE ngs (V)
-0.4 0
1D (mA)
DRAIN CURRENT
1997-05-12 3/5
TOSHIBA 3SK284
lstl - VGlS lstl - ID
COMMON SOURCE COMMON SOURCE
VDs=2V 35 VDs=2V
f= tkHz f= 1kNz
Ta = 25°C 25 a i2 Ta = 25''C
INPUT GATE 1 g 5 30 INPUT GATE 1
Vats--0 5V e i
20 M M 25
/\ a a
E E v 0 5V
0.25 E Si 20 G28= .
l'\ 15 D ©
f \ 5 2.3 "ss,,,,,
\ * ts /
0 Q E 15
N'i' tht ty) / "s,
N 10 S E "ss,, ,
a: M A''" "s, 0.25
Css <31 f, 10
ttd ad "N
-0.25 8 2 \ "ss, 0
'c. 5 _
"ss, "s, 5 l 'NCC" "u.
"N - .5
"Cu." 'ss-gts
-1.6 -1.2 -0.8 -0.4 0 o 2 4 6 8 10
GATE 1-SOURCE VOLTAGE les (V) DRAIN CURRNT ID (mA)
Gps, NF - VDS Gps, NF - VGlS
24 6 24 6
COMMON SOURCE
VDs--2v
VG23=0.5V
A f=800MHz A
Fi, g 53 Ta=25°C 53
03 COMMON SOURCE , c3 E
S, VG25=0.5V g E E
s ID=2mA a g a
'ii,': f=800MHz tl 'ii,': tl
Ta=25°C ~ =
& g g g
o 1 2 3 4 5 6 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0
DRAIN-SOURCE VOLTAGE VDs (V) GATE 1-SOURCE VOLTAGE VGls (V)
1997-05-12 4/5
TOSHIBA
3SK284
POWER GAIN Gps (dB)
INPUT SUSCEPTANCE bis (mS)
REVERSE TRANSFER SUSCEI’TANCE hrs (/18)
Gps, NF - ID Gps - VG2S
a _ /\
_ / BIAS CIRCIUT
B. a 10 l
COMMON SOURCE a © To VDD
VDs=2V E a 0 VG2S /
VG2S=0.6hr g g 7- cq
f-- 800MHz 'i-C pd
a=25 C W, g l
z l VDD=2V(=VDS)+Rx2mA
-20 f at VGgs=0.5V
' f: 800MHz
Ta=25°C
0 2 4 6 8 IO 12 14 -2 -1 o 1 2 3 4 5
DRAIN CURRENT ID (mA) GATE 2-SOURCE VOLTAGE VGgs (V)
Yis - f PD - Ta
10 I g
- COMMON SOURCE g
f: 2GHz VDs=2V
s 1’ v = 0 5V ©
or G25 . A
wtf, 1.8 ID=2mA
I. Ta=25°C Z
6 (/1.4 g
1.2 if
4 1.0 2
0.8 Cl
2 0.4 t
.1 r'i',ci;
o 2 4 6 8 10 Q
0 25 50 75 100 125 150
INPUT CONDUCTANCE gis (mS)
AMBIENT TEMPERATURE Ta (''C)
Yrs - f st - f
REVERSE TRANSFER FORWARD TRANSFER
CONDUCTANCE grs (SS) CONDUCTANCE gfs (m8)
0 40 80 120 A 12 14 16 18 Yes - f
0 , o 5
COMMON v COMMON A f-- 2GHg
SOURCE 3") (r.1 - SOURCE ,
4 VDs=2V 2 iN, VDs=2V V 4 1.8
- 0 VG2s=0 " 8 - 0.6 VG2s=0 5V g 1.6
ID=2mA a; hi,', ID=2mA JD I
Ta=25°C E \1 2 Ta=25°C M f”
80 A, 4 . co 3
- m _ z
o 11.4 < /1.2
\12 w W' 8 /1.0
- 120 1.4 pd -6 1 8 2 0 8
'IIS 1.6 [e, C' [t . / COMMON
a 6f= 2GHz F SOURCE
1.8 g E 0.6 VDs=2V
-160 of: 2GHz - - -8 £5 1 "tl VG2S=0.5V
'Fel, o _0 , ID=2mA
g 021 Ta=25°C
-200 -10 0 l
g 0 0.4 0.8 1.2
OUTPUT CONDUCTANCE Ms (mS)
1997-05-12 5/5
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