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3SK274TOSHIBAN/a3000avaiRF Dual Gate FETs


3SK274 ,RF Dual Gate FETsAPPLICATIONS. Unit in mmI\III\\III\IIIII\II nA'I'IRIl-l‘ f-r," r-oet2.1+0.1IVIHAIIVIUIVI KAI INUD t ..
3SK284 ,N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)APPLICATIONS. Unit in mmMAXIMUM RATINGS (Ta = 25°C)CTT A RA CTERIR’FTC SVMROT. RATINC, I TNTT 1. 25 ..
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3SK274
RF Dual Gate FETs
TOSHIBA 3SK274
TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE
3SIK274
TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm
MAXIMUM RATINGS (Ta = 25°C) 2.1:0.1_.
1. 2510.1
CHARACTERISTIC SYMBOL RATING UNIT
Gatel-Drain Voltage VGlDO -9 V N - , r i 4
Gate2-Drain Voltage VGZDO -9 V li j g”:
Gatel-Source Voltage VGlS -4 V 3 2 3 f,
Gate2-Source Voltage vas -4 V - EE- El -r_._r.r._
Gatel Current 1G1 1 mA
Gate2 Current 1G2 1 mA m I C.',
Power Dissipation PD 100 mW ij,) J- ! t
Channel Temperature Tch 125 T cf CD 1 l o -
Storage Temperature Range Tstg -55--125 "C l. GATE 1 g.
2. GATE 2 CC
MARKING 3. DRAIN
2 1 4. SOURCE
Cl icl
U N JEDEC -
EIAJ -
ll, tl, TOSHIBA 2-2K1B
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 0.006g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gatel Leakage Current IGISS VDS=0,VG1S= -3V,VG2S=0 - - -4 ,uA
Gate2 Leakage Current IGZSS Vns=0,VG1s=0,VG2s-- -3ir - - _d ,uA
Drain Current IDSS VDS=3V, VGls=0, VG2s--0 6 - 20 mA
Gatel-Source Cut-off Voltage VGlS(OFF) Vns=3v,VG2s=0,1D=100/Lt -0.7 - -1.8 V
Gate2-Source Cut-off Voltage VG2S(OFF) VDS=3V,VG1S=0,ID=100#A -0.7 - -1.8 V
. VDS=3V, VG23= IV
Forward Transfer Admittance lyfsl ID-- 5mA, f=1kHz - 19 - mS
Input Capacitance Ciss VDS=3V, VG2s=IV - 0.6 1.4
Reverse Transfer Capacitance Crss ID=5mA, f=1MHz - 0.013 0.030
Power Gain Gps vns=3V, VG2S=1V . 17 20.5 - dB
Noise Figure NF ID=5mA, f=800MHz (Fig 1) - 1.0 2.0
CAUTION
GaAs (Gallium Arsenide) is used in this product. The dust or vapor can be dangerous to
humans. Do not break, cut, crush or dissolve chemically. Dispose of this product properly
according to law. Do not intermingle with normal industrial or domestic waste.
961001EAC2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
TOSHIBA 3SK274
Fig.1 800MHz Gps, NF TEST CIRCUIT
INPUT OUTPUT
Rg =, 500 RL E 500
- ESHIELD _
LI-IA : ¢0.8mm SILVER PLATED COPPER WIRE
C : AIR TRIMMER TTA25A 200A (MURATA MFG. Co., LTD.)
RFC 1 : ¢0.35mm UEW 3mm ID, 7T
RFC 2 : ¢0.35mm UEW 3mm ID, 10T
CAUTION
GaAs(Gallium Arsenide) is used in this product. The dust or vapor can be dangerous to
humans. Do not break, cut, crush or dissolve chemically. Dispose of this product properly
according to law. Do not intermingle with normal industrial or domestic waste.
961001 EAC2'
O Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or
pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the
products with other industrial waste or with domestic garbage.
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o The information contained herein is subject to change without notice.
TOSHIBA 3SK274
ID - VDS ID - VDS
COMMON COMMON
:5 SOURCE ii: VG25=0V SOURCE
- v I" w...---
v =ov / v =0v
J? G25 J.? GIS
E Ta=25°C E r.,..-..----" -0.25 Ta=25°C
il g 8 "''" l
8 C2 l/ -..--- -0.5
a F., I// I
ti g 4 ...--" -0.75
D t: // I
..----" ---- - . I
2 4 6 8 10 0 2 4 6 8 IO
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE vns (V)
ID - VGIS ID - VGZS
COMMON SOURCE COMMON SOURCE
v =3V A A
DS li VDS=3V li
Ta=25°C V v
Ta=25°C
J.? f.?
-2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0 -2.0 -1.6 -1.2 -0.8 -0.4 0
GATE1-SOURCE VOLTAGE VGls (V) GATE2-SOURCE VOLTAGE vas (V)
TOSHIBA 3SK274
lstl - VGlS Istl - ID
COMMON SOURCE M m
VDs=3V VG2s=1V o o
f-- 1 kHz E ,
Ta=25°C E E
INPUT :65 $63
GATEI ttt g ttt g
E E COMMON SOURCE
”E" Tii,
E, iiit' VDS=3V
'Jr" 'ld" f=1kHz
g g Ta=25°C
t t INPUT
-1 E f?, GATEl
-2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0 o 5 10 15 20 25 30 35
GATE1-SOURCE VOLTAGE VG1s (V) DRAIN CURRENT ID (mA)
Gps, NF - VDS Gps, NF - VGlS
A A 20
95 53, A
v a 5-;
m h '5 v
f te; - 16
2 COMMON SOURCE a J'. COMMON SOURCE ,
ii ngs=lV g a 12 VDs=3V a
n: ID=5mA E g VG25=1V i?,
E f=800MHz [ll, g f-- 800MHz ti",
D‘ Ta=25°C z E Ta=25 c 51,
NF 9" NF te;
0 1 2 3 4 5 6 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 o
DRAIN-SOURCE VOLTAGE vDs (V) GATE1-SOURCE VOLTAGE les (V)
TOSHIBA
3SK274
Gps, NF - ID Gps - VG2S
20 r "
g r',i.,2s, g / BIAS CIRCIUT
V COMMON SOURCE h V 10 I v
m a DD
d? VDs=3V a d? (
v r-l-,
E VG25=1V E E 0 / st jt
c: f=800MHz U c: R
M T 25°C E M 10
il a= i':'-), il VDD-- 3V(=VDS)+RX5mA
n. 2; a. I at VG2S=1V
-20 f f-- 800MHz
Ta=25°C
0 2 4 6 8 l 0 l2 1 4 - 2 - 1 0 1 2 3 4 5
DRAIN CURRENT ID (mA) GATETS0UftCE VOLTAGE vas (V)
Yis - f PD - Ta
8 I l E
'ii -o f-- 2GHz g
V / 1.8 m
, e 1.6 m
A2 1.4
g 1.2 ;
i'ci 4 / 1.0 i');
M I 0 8 COMMON E
p, 0 6 SOURCE a
a 2 ' . VDs=3V 'ii',':
a 0.4 822...: 2
z 0.2 D-- a
“ 0.1 Ta--25''C H
0 1 2 3 4 5 Q 0 25 50 75 100 125 150
INPUT CONDUCTANCE gis (mS) AMBIENT TEMPERATURE Ta (°C)
Yrs - f st - f Yos - f
0 f 0 1 5 1 1
0.1 COMMON 0 2 t 0.1 COMMON
M " SOURCE m i . SOURCE
0 V =3V CC) 0.4 l v =3V a
a -40 0.4 DS , -2-, DS - g. l
g . VG2s--IV t 06; vats--lv
% 0.6 ID=5mA 8 - . ID=5mA 2'
Si) Ta=25°C B 0.8 k Ta=25°C
Pr,, -80 0.8 “a -4 1.0 to, 3
m R, ttt r" 1.2 2;
M _ 1 0 m s 1 4 5
We m 1.2 it ,,, . o. ( 1.0
II) " a A... I ao
a .n x 1.4 < .n 1 6 O /
g -120 "N 1.6 m -6 . m A 0.8
e F I 2 , COMMON
't 's,, 1.8 - 'ii' 1.8 ti 0.6 SOURCE
m "sis, 3 I , VDS=3V
ts -160 , pt -8 D 1 0.4- v =1V
h: - o l f-- 2GHz o . G2S=
M f-- 2GHz k.
0.2 - ID=5mA
0.1 Ta=25°C
- 200 - 10 0
0 20 40 60 80 16 18 20 22 0 0.4 0.8 1.2
REVERSE TRANSFER CONDUCTANCE FORWARD TRANSFER CONDUCTANCE OUTPUT CONDUCTANCE
grs (PS) gfs (m8) gos (HIS)
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